Abstract
Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.
| Original language | English |
|---|---|
| Pages (from-to) | 65-71 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 457 |
| DOIs | |
| Publication status | Published - 1 Jan 2017 |
OECD Field of Science
- 1.3 Physical Sciences
Keywords
- A1. Computer simulation
- A1. Convection
- A1. Doping
- A1. Surface processes
- A2. Floating zone technique
- B2. Semiconducting silicon
Fingerprint
Dive into the research topics of '3D modeling of doping from the atmosphere in floating zone silicon crystal growth'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver