A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation

František Zajíc; Vítězslav Jarý; Jiří Pospíšil; Pavel Boháček; Zafari Umar; Michal Piasecki; Mikhail G. Brik; Romana Kučerková; Alena Beitlerová; Martin Nikl

doi:10.1039/d4ma00976b

A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation

František Zajíc^*
, Vítězslav Jarý
, Jiří Pospíšil
, Pavel Boháček
, Zafari Umar
, Michal Piasecki
, Mikhail G. Brik
, Romana Kučerková
, Alena Beitlerová
, Martin Nikl^*

^*Corresponding author for this work

Charles University
Czech Academy of Sciences
Jan Dlugosz University in Czestochowa
Academy of Sciences of the Republic of Tadzhikistan
Chongqing University of Posts and Telecommunications
University of Belgrade
University of Tartu
Academy of Romanian Scientists

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The growth of Gd₃Ga_2.7Al_2.3O₁₂:Ce and Gd₃Ga_2.7Al_2.3O₁₂:Ce,Mg crystals was accomplished by the laser-diode floating zone method (LDFZM) under a pressurized oxygen atmosphere. Optical, luminescence, and scintillation characterization were performed, which points to their comparable scintillation performance and lower charge trapping in the scintillation mechanism compared to commercial GAGG:Ce crystals grown by the Czochralski method. Theoretical electronic band structure calculations were performed for Gd₃Ga_2.7Al_2.3O₁₂, Gd₃Ga₅O₁₂ and Gd₃Al₅O₁₂ compositions and these are discussed in the light of the experimental results obtained.

Original language	English
Pages (from-to)	777-787
Number of pages	11
Journal	Materials Advances
Volume	6
Issue number	2
DOIs	https://doi.org/10.1039/d4ma00976b
Publication status	Published - 1 Jan 2025
Externally published	Yes

Access to Document

10.1039/d4ma00976b

Cite this

@article{4fec8a4978ed4eca8f39bcd1e0e6e828,

title = "A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation",

abstract = "The growth of Gd3Ga2.7Al2.3O12:Ce and Gd3Ga2.7Al2.3O12:Ce,Mg crystals was accomplished by the laser-diode floating zone method (LDFZM) under a pressurized oxygen atmosphere. Optical, luminescence, and scintillation characterization were performed, which points to their comparable scintillation performance and lower charge trapping in the scintillation mechanism compared to commercial GAGG:Ce crystals grown by the Czochralski method. Theoretical electronic band structure calculations were performed for Gd3Ga2.7Al2.3O12, Gd3Ga5O12 and Gd3Al5O12 compositions and these are discussed in the light of the experimental results obtained.",

author = "Franti{\v s}ek Zaj{\'i}c and V{\'i}t{\v e}zslav Jar{\'y} and Ji{\v r}{\'i} Posp{\'i}{\v s}il and Pavel Boh{\'a}{\v c}ek and Zafari Umar and Michal Piasecki and Brik, \{Mikhail G.\} and Romana Ku{\v c}erkov{\'a} and Alena Beitlerov{\'a} and Martin Nikl",

note = "Publisher Copyright: {\textcopyright} 2025 The Author(s)",

year = "2025",

month = jan,

day = "1",

doi = "10.1039/d4ma00976b",

language = "English",

volume = "6",

pages = "777--787",

journal = "Materials Advances",

issn = "2633-5409",

publisher = "Royal Society of Chemistry",

number = "2",

}

TY - JOUR

T1 - A fast GGAG:Ce(Mg) single crystal scintillator

T2 - LDFZM growth, characterization and electronic band structure calculation

AU - Zajíc, František

AU - Jarý, Vítězslav

AU - Pospíšil, Jiří

AU - Boháček, Pavel

AU - Umar, Zafari

AU - Piasecki, Michal

AU - Brik, Mikhail G.

AU - Kučerková, Romana

AU - Beitlerová, Alena

AU - Nikl, Martin

PY - 2025/1/1

Y1 - 2025/1/1

N2 - The growth of Gd3Ga2.7Al2.3O12:Ce and Gd3Ga2.7Al2.3O12:Ce,Mg crystals was accomplished by the laser-diode floating zone method (LDFZM) under a pressurized oxygen atmosphere. Optical, luminescence, and scintillation characterization were performed, which points to their comparable scintillation performance and lower charge trapping in the scintillation mechanism compared to commercial GAGG:Ce crystals grown by the Czochralski method. Theoretical electronic band structure calculations were performed for Gd3Ga2.7Al2.3O12, Gd3Ga5O12 and Gd3Al5O12 compositions and these are discussed in the light of the experimental results obtained.

AB - The growth of Gd3Ga2.7Al2.3O12:Ce and Gd3Ga2.7Al2.3O12:Ce,Mg crystals was accomplished by the laser-diode floating zone method (LDFZM) under a pressurized oxygen atmosphere. Optical, luminescence, and scintillation characterization were performed, which points to their comparable scintillation performance and lower charge trapping in the scintillation mechanism compared to commercial GAGG:Ce crystals grown by the Czochralski method. Theoretical electronic band structure calculations were performed for Gd3Ga2.7Al2.3O12, Gd3Ga5O12 and Gd3Al5O12 compositions and these are discussed in the light of the experimental results obtained.

UR - https://www.scopus.com/pages/publications/85212915279

U2 - 10.1039/d4ma00976b

DO - 10.1039/d4ma00976b

M3 - Article

AN - SCOPUS:85212915279

SN - 2633-5409

VL - 6

SP - 777

EP - 787

JO - Materials Advances

JF - Materials Advances

IS - 2

ER -

A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this