A new intrinsic defect in amorphous SiO2: Twofold coordinated silicon

L. N. Skuja; A. N. Streletsky; A. B. Pakovich

doi:10.1016/0038-1098(84)90290-4

A new intrinsic defect in amorphous SiO₂: Twofold coordinated silicon

L. N. Skuja^*
, A. N. Streletsky
, A. B. Pakovich

^*Corresponding author for this work

Laboratory of Optical Materials, Institute of Solid State Physics

N.N. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

340 Citations (Scopus)

Abstract

The well known optical absorption band at 5.03 eV (the "B₂ band") and luminescence band at 4.3 eV in amorphous SiO₂ are due to singlet-to-singlet transitions, while the luminescence band at 2.65 eV - due to triplet-to-singlet transitions in a silicon-related intrinsic defect. This defect occurs both in the bulk and on the surface. Luminescence polarization data indicate C_2v symmetry. The most probable model for this center is a silicon atom with only two neighboring oxygens. Such defects form a separate class of valence alternation defects, characteristic for amorphous materials having atoms in tetrahedral coordination.

Original language	English
Pages (from-to)	1069-1072
Number of pages	4
Journal	Solid State Communications
Volume	50
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(84)90290-4
Publication status	Published - Jun 1984

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@article{437d90da32d2477f8d57a5c7040e9c57,

title = "A new intrinsic defect in amorphous SiO2: Twofold coordinated silicon",

abstract = "The well known optical absorption band at 5.03 eV (the {"}B2 band{"}) and luminescence band at 4.3 eV in amorphous SiO2 are due to singlet-to-singlet transitions, while the luminescence band at 2.65 eV - due to triplet-to-singlet transitions in a silicon-related intrinsic defect. This defect occurs both in the bulk and on the surface. Luminescence polarization data indicate C2v symmetry. The most probable model for this center is a silicon atom with only two neighboring oxygens. Such defects form a separate class of valence alternation defects, characteristic for amorphous materials having atoms in tetrahedral coordination.",

author = "Skuja, \{L. N.\} and Streletsky, \{A. N.\} and Pakovich, \{A. B.\}",

year = "1984",

month = jun,

doi = "10.1016/0038-1098(84)90290-4",

language = "English",

volume = "50",

pages = "1069--1072",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "12",

}

TY - JOUR

T1 - A new intrinsic defect in amorphous SiO2

T2 - Twofold coordinated silicon

AU - Skuja, L. N.

AU - Streletsky, A. N.

AU - Pakovich, A. B.

PY - 1984/6

Y1 - 1984/6

N2 - The well known optical absorption band at 5.03 eV (the "B2 band") and luminescence band at 4.3 eV in amorphous SiO2 are due to singlet-to-singlet transitions, while the luminescence band at 2.65 eV - due to triplet-to-singlet transitions in a silicon-related intrinsic defect. This defect occurs both in the bulk and on the surface. Luminescence polarization data indicate C2v symmetry. The most probable model for this center is a silicon atom with only two neighboring oxygens. Such defects form a separate class of valence alternation defects, characteristic for amorphous materials having atoms in tetrahedral coordination.

AB - The well known optical absorption band at 5.03 eV (the "B2 band") and luminescence band at 4.3 eV in amorphous SiO2 are due to singlet-to-singlet transitions, while the luminescence band at 2.65 eV - due to triplet-to-singlet transitions in a silicon-related intrinsic defect. This defect occurs both in the bulk and on the surface. Luminescence polarization data indicate C2v symmetry. The most probable model for this center is a silicon atom with only two neighboring oxygens. Such defects form a separate class of valence alternation defects, characteristic for amorphous materials having atoms in tetrahedral coordination.

UR - https://www.scopus.com/pages/publications/0021450758

U2 - 10.1016/0038-1098(84)90290-4

DO - 10.1016/0038-1098(84)90290-4

M3 - Article

AN - SCOPUS:0021450758

SN - 0038-1098

VL - 50

SP - 1069

EP - 1072

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

A new intrinsic defect in amorphous SiO₂: Twofold coordinated silicon

Abstract

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