A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters

A. Yu Leiderman; S. Zh Karazhanov; L. K. Sarybaev

A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters

A. Yu Leiderman
, S. Zh Karazhanov
, L. K. Sarybaev

Fizika-Solntse Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters, being the consequence of the rise of an i-region at the heterojunction interface, is proposed. The i-region is characterized by the high concentration of traps forming a quasi-continuous impurity spectrum in the energy band gap. The theory and experiment for Cu ₂S/CdS solar cells agree well.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Applied Solar Energy (English translation of Geliotekhnika)
Volume	35
Issue number	3
Publication status	Published - 1999
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

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title = "A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters",

abstract = "A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters, being the consequence of the rise of an i-region at the heterojunction interface, is proposed. The i-region is characterized by the high concentration of traps forming a quasi-continuous impurity spectrum in the energy band gap. The theory and experiment for Cu 2S/CdS solar cells agree well.",

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AU - Leiderman, A. Yu

AU - Karazhanov, S. Zh

AU - Sarybaev, L. K.

PY - 1999

Y1 - 1999

N2 - A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters, being the consequence of the rise of an i-region at the heterojunction interface, is proposed. The i-region is characterized by the high concentration of traps forming a quasi-continuous impurity spectrum in the energy band gap. The theory and experiment for Cu 2S/CdS solar cells agree well.

AB - A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters, being the consequence of the rise of an i-region at the heterojunction interface, is proposed. The i-region is characterized by the high concentration of traps forming a quasi-continuous impurity spectrum in the energy band gap. The theory and experiment for Cu 2S/CdS solar cells agree well.

UR - https://www.scopus.com/pages/publications/77950453270

M3 - Article

AN - SCOPUS:77950453270

SN - 0003-701X

VL - 35

SP - 1

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JO - Applied Solar Energy (English translation of Geliotekhnika)

JF - Applied Solar Energy (English translation of Geliotekhnika)

IS - 3

ER -

A new mechanism of the rise of a weakly temperature-dependent exponential current characteristic in heterophotoconverters

Abstract

UN SDGs

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