A study of electrical properties of dislocation engineered Si processed by ultrasound

This work presents experimental study of electrical properties of dislocation engineered Si p-n junction before and after the influence of ultrasound waves. We have studied current-voltage characteristics in the dark and upon illumination for forward and reverse biases before and after ultrasound processing. By fitting the theoretically established current-voltage dependence to the experimentally measured ones, the diode ideality factor and saturation current have been estimated. It is found that current transport through the dislocation-engineered Si p-n junction can be controlled by generation-recombination or tunneling recombination mechanisms. Ultrasound is found to modulate electrical properties of the dislocation engineered Si.