A vacuum cell for obtaining clean surfaces on liquid low melting point metals

A. Simanovskis; J. Maniks; A. Bojarevics; Yu Gelfgat

doi:10.1016/s0042-207x(97)00016-x

A vacuum cell for obtaining clean surfaces on liquid low melting point metals

A. Simanovskis
, J. Maniks^*
, A. Bojarevics
, Yu Gelfgat

^*Corresponding author for this work

University of Latvia

University of Latvia
Latvian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Clean oxide film-free surface of liquid gallium was obtained in a sealed vacuum cell with a glass lid for observation. The cell was evacuated to high vacuum (10^-4Pa) before admission of liquid and sealing. The surface contamination was about 2-5% of the free area and did not exhibit noticeable increase during several months of storing and employing the cell. The cell described allows observation of surface flows, capillary phenomena and crystallization processes under different conditions.

Original language	English
Pages (from-to)	551-552
Number of pages	2
Journal	Vacuum
Volume	48
Issue number	6
DOIs	https://doi.org/10.1016/s0042-207x(97)00016-x
Publication status	Published - Jun 1997

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Cite this

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title = "A vacuum cell for obtaining clean surfaces on liquid low melting point metals",

abstract = "Clean oxide film-free surface of liquid gallium was obtained in a sealed vacuum cell with a glass lid for observation. The cell was evacuated to high vacuum (10-4Pa) before admission of liquid and sealing. The surface contamination was about 2-5\% of the free area and did not exhibit noticeable increase during several months of storing and employing the cell. The cell described allows observation of surface flows, capillary phenomena and crystallization processes under different conditions.",

author = "A. Simanovskis and J. Maniks and A. Bojarevics and Yu Gelfgat",

year = "1997",

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language = "English",

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journal = "Vacuum",

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T1 - A vacuum cell for obtaining clean surfaces on liquid low melting point metals

AU - Simanovskis, A.

AU - Maniks, J.

AU - Bojarevics, A.

AU - Gelfgat, Yu

PY - 1997/6

Y1 - 1997/6

N2 - Clean oxide film-free surface of liquid gallium was obtained in a sealed vacuum cell with a glass lid for observation. The cell was evacuated to high vacuum (10-4Pa) before admission of liquid and sealing. The surface contamination was about 2-5% of the free area and did not exhibit noticeable increase during several months of storing and employing the cell. The cell described allows observation of surface flows, capillary phenomena and crystallization processes under different conditions.

AB - Clean oxide film-free surface of liquid gallium was obtained in a sealed vacuum cell with a glass lid for observation. The cell was evacuated to high vacuum (10-4Pa) before admission of liquid and sealing. The surface contamination was about 2-5% of the free area and did not exhibit noticeable increase during several months of storing and employing the cell. The cell described allows observation of surface flows, capillary phenomena and crystallization processes under different conditions.

UR - https://www.scopus.com/pages/publications/0031152828

U2 - 10.1016/s0042-207x(97)00016-x

DO - 10.1016/s0042-207x(97)00016-x

M3 - Article

AN - SCOPUS:0031152828

SN - 0042-207X

VL - 48

SP - 551

EP - 552

JO - Vacuum

JF - Vacuum

IS - 6

ER -

A vacuum cell for obtaining clean surfaces on liquid low melting point metals

Abstract

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