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Ab initio calculations of the H centers in MgF2 crystals

  • F. U. Abuova*
  • , A. T. Akilbekov
  • , E. A. Kotomin
  • *Corresponding author for this work
  • L.N. Gumilyov Eurasian National University
  • Max Planck Institute for Solid State Research

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

MgF2 with rutile structure is important wide-gap optical material with numerous applications. We present and discuss the results of calculations for basic hole defects - interstitial F atoms (called also the colour H centres). This study is based on the large scale ab initio DFT calculations using hybrid B3PW exchange-correlation functional as implemented into CRYSTAL computer code. The electronic structure, atomic geometry, charge density distribution are calculated and discussed.

Original languageEnglish
Article number012041
JournalIOP Conference Series: Materials Science and Engineering
Volume38
Issue number1
DOIs
Publication statusPublished - 2012
EventInternational Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Latvia
Duration: 17 Apr 201220 Apr 2012

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