@inproceedings{af10539ed1fe4433bf8b5e240e2c20be,
title = "AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance",
abstract = "This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only 1.3 μ mathrm\{A-mm\} at -20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.",
keywords = "distributed gates, GaN high-electron-mobility transistor, gate leakage currents",
author = "Maira Elksne and Abdullah Ai-Khalidi and Edward Wasige",
note = "Publisher Copyright: {\textcopyright} 2018 European Microwave Association - EuMA.; 13th European Microwave Integrated Circuits Conference, EuMIC 2018 ; Conference date: 24-09-2018 Through 25-09-2018",
year = "2018",
month = nov,
day = "16",
doi = "10.23919/EuMIC.2018.8539896",
language = "English",
series = "EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "13--16",
booktitle = "EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference",
address = "United States",
}