Analysis of magnetic field effect on 3D melt flow in CZ Si growth

N. G. Ivanov; A. B. Korsakov; E. M. Smirnov; K. V. Khodosevitch; V. V. Kalaev; Yu N. Makarov; E. Dornberger; J. Virbulis; W. Von Ammon

doi:10.1016/S0022-0248(02)02263-7

Analysis of magnetic field effect on 3D melt flow in CZ Si growth

N. G. Ivanov
, A. B. Korsakov
, E. M. Smirnov
, K. V. Khodosevitch
, V. V. Kalaev
, Yu N. Makarov^*
, E. Dornberger
, J. Virbulis
, W. Von Ammon

^*Corresponding author for this work

Peter the Great St. Petersburg Polytechnic University
Soft-Impact Ltd.
STR Inc.
Siltronic AG

Research output: Contribution to journal › Conference article › peer-review

51 Citations (Scopus)

Abstract

Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is numerically simulated using a hybridization of the Reynolds-averaged Navier-Stokes approach and large-eddy simulation. The proposed RANS/LES model is based on a differential model of turbulence. The results obtained with three computational models differing in the number of considered hot-zone components are presented and compared with the experimental data for temperature in the melt and along the melt-crucible surface. The influence of electrical currents in the crystal on melt motion reorganization is studied.

Original language	English
Pages (from-to)	183-188
Number of pages	6
Journal	Journal of Crystal Growth
Volume	250
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)02263-7
Publication status	Published - Mar 2003
Externally published	Yes
Event	ACCGE-14 - Seatle, WA, United States Duration: 4 Aug 2002 → 9 Aug 2002

Keywords

A1. Magnetic field
A1. Turbulent convection
A2. Czochralski method
B1. Silicon

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10.1016/S0022-0248(02)02263-7

Cite this

@article{6dc1c85299af40faaac6ddaf912ffa41,

title = "Analysis of magnetic field effect on 3D melt flow in CZ Si growth",

abstract = "Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is numerically simulated using a hybridization of the Reynolds-averaged Navier-Stokes approach and large-eddy simulation. The proposed RANS/LES model is based on a differential model of turbulence. The results obtained with three computational models differing in the number of considered hot-zone components are presented and compared with the experimental data for temperature in the melt and along the melt-crucible surface. The influence of electrical currents in the crystal on melt motion reorganization is studied.",

keywords = "A1. Magnetic field, A1. Turbulent convection, A2. Czochralski method, B1. Silicon",

author = "Ivanov, \{N. G.\} and Korsakov, \{A. B.\} and Smirnov, \{E. M.\} and Khodosevitch, \{K. V.\} and Kalaev, \{V. V.\} and Makarov, \{Yu N.\} and E. Dornberger and J. Virbulis and \{Von Ammon\}, W.",

year = "2003",

month = mar,

doi = "10.1016/S0022-0248(02)02263-7",

language = "English",

volume = "250",

pages = "183--188",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

note = "ACCGE-14 ; Conference date: 04-08-2002 Through 09-08-2002",

}

TY - JOUR

T1 - Analysis of magnetic field effect on 3D melt flow in CZ Si growth

AU - Ivanov, N. G.

AU - Korsakov, A. B.

AU - Smirnov, E. M.

AU - Khodosevitch, K. V.

AU - Kalaev, V. V.

AU - Makarov, Yu N.

AU - Dornberger, E.

AU - Virbulis, J.

AU - Von Ammon, W.

PY - 2003/3

Y1 - 2003/3

N2 - Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is numerically simulated using a hybridization of the Reynolds-averaged Navier-Stokes approach and large-eddy simulation. The proposed RANS/LES model is based on a differential model of turbulence. The results obtained with three computational models differing in the number of considered hot-zone components are presented and compared with the experimental data for temperature in the melt and along the melt-crucible surface. The influence of electrical currents in the crystal on melt motion reorganization is studied.

AB - Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is numerically simulated using a hybridization of the Reynolds-averaged Navier-Stokes approach and large-eddy simulation. The proposed RANS/LES model is based on a differential model of turbulence. The results obtained with three computational models differing in the number of considered hot-zone components are presented and compared with the experimental data for temperature in the melt and along the melt-crucible surface. The influence of electrical currents in the crystal on melt motion reorganization is studied.

KW - A1. Magnetic field

KW - A1. Turbulent convection

KW - A2. Czochralski method

KW - B1. Silicon

UR - https://www.scopus.com/pages/publications/0037371681

U2 - 10.1016/S0022-0248(02)02263-7

DO - 10.1016/S0022-0248(02)02263-7

M3 - Conference article

AN - SCOPUS:0037371681

SN - 0022-0248

VL - 250

SP - 183

EP - 188

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

T2 - ACCGE-14

Y2 - 4 August 2002 through 9 August 2002

ER -

Analysis of magnetic field effect on 3D melt flow in CZ Si growth

Abstract

Keywords

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