Antiferroelectric PbZrO3 thin films: Structure, properties and irradiation effects

A. Sternberg; K. Kundzins; V. Zauls; I. Aulika; L. Čakare; R. Bittner; H. Weber; K. Humer; D. Lesnyh; D. Kulikov; Y. Trushin

doi:10.1016/S0955-2219(03)00450-3

Antiferroelectric PbZrO₃ thin films: Structure, properties and irradiation effects

A. Sternberg^*
, K. Kundzins
, V. Zauls
, I. Aulika
, L. Čakare
, R. Bittner
, H. Weber
, K. Humer
, D. Lesnyh
, D. Kulikov
, Y. Trushin

^*Corresponding author for this work

University of Latvia
J. Stefan Institute
TU Wien
Peter the Great St. Petersburg Polytechnic University

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Irradiation effects on highly oriented antiferroelectric PbZrO₃ and ferroelectric Pb_0.92La_0.08(Zr_0.65Ti_0.35) O₃ thin films are investigated being exposed to neutron irradiation up to fluence 2^*10²² m^-2. The higher resistance of antiferroelectric PbZrO₃ thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO₃ films.

Original language	English
Pages (from-to)	1653-1657
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	24
Issue number	6
DOIs	https://doi.org/10.1016/S0955-2219(03)00450-3
Publication status	Published - Jun 2004

Keywords

Antiferroelectric and ferroelectric thin films
Dielectric properties
Neutron irradiation
Oxygen vacancies
Radiation-induced charges

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10.1016/S0955-2219(03)00450-3

Cite this

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title = "Antiferroelectric PbZrO3 thin films: Structure, properties and irradiation effects",

abstract = "Irradiation effects on highly oriented antiferroelectric PbZrO3 and ferroelectric Pb0.92La0.08(Zr0.65Ti0.35) O3 thin films are investigated being exposed to neutron irradiation up to fluence 2*1022 m-2. The higher resistance of antiferroelectric PbZrO3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO3 films.",

keywords = "Antiferroelectric and ferroelectric thin films, Dielectric properties, Neutron irradiation, Oxygen vacancies, Radiation-induced charges",

author = "A. Sternberg and K. Kundzins and V. Zauls and I. Aulika and L. {\v C}akare and R. Bittner and H. Weber and K. Humer and D. Lesnyh and D. Kulikov and Y. Trushin",

year = "2004",

month = jun,

doi = "10.1016/S0955-2219(03)00450-3",

language = "English",

volume = "24",

pages = "1653--1657",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

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}

TY - JOUR

T1 - Antiferroelectric PbZrO3 thin films

T2 - Structure, properties and irradiation effects

AU - Sternberg, A.

AU - Kundzins, K.

AU - Zauls, V.

AU - Aulika, I.

AU - Čakare, L.

AU - Bittner, R.

AU - Weber, H.

AU - Humer, K.

AU - Lesnyh, D.

AU - Kulikov, D.

AU - Trushin, Y.

PY - 2004/6

Y1 - 2004/6

N2 - Irradiation effects on highly oriented antiferroelectric PbZrO3 and ferroelectric Pb0.92La0.08(Zr0.65Ti0.35) O3 thin films are investigated being exposed to neutron irradiation up to fluence 2*1022 m-2. The higher resistance of antiferroelectric PbZrO3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO3 films.

AB - Irradiation effects on highly oriented antiferroelectric PbZrO3 and ferroelectric Pb0.92La0.08(Zr0.65Ti0.35) O3 thin films are investigated being exposed to neutron irradiation up to fluence 2*1022 m-2. The higher resistance of antiferroelectric PbZrO3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO3 films.

KW - Antiferroelectric and ferroelectric thin films

KW - Dielectric properties

KW - Neutron irradiation

KW - Oxygen vacancies

KW - Radiation-induced charges

UR - https://www.scopus.com/pages/publications/0942278165

U2 - 10.1016/S0955-2219(03)00450-3

DO - 10.1016/S0955-2219(03)00450-3

M3 - Article

AN - SCOPUS:0942278165

SN - 0955-2219

VL - 24

SP - 1653

EP - 1657

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 6

ER -

Antiferroelectric PbZrO₃ thin films: Structure, properties and irradiation effects

Abstract

Keywords

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