Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

R. Aleksiejunas; P. Ščajev; S. Nargelas; S. Miasojedovas; K. Jarašiunas; L. Trinkler; J. Grigorjeva; B. Berzina; K. H. Chen; Y. T. Chen; M. W. Chen; L. C. Chen

doi:10.1088/1757-899X/38/1/012054

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

R. Aleksiejunas^*
, P. Ščajev
, S. Nargelas
, S. Miasojedovas
, K. Jarašiunas
, L. Trinkler
, J. Grigorjeva
, B. Berzina
, K. H. Chen
, Y. T. Chen
, M. W. Chen
, L. C. Chen

^*Corresponding author for this work

Laboratory of Spectroscopy, Institute of Solid State Physics

Vilnius University
University of Latvia
National Taiwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in Al_xGa_1-xN nanocolumns grown on (111) silicon substrates and in thick Al_xGa_1-xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

Original language	English
Article number	012054
Journal	IOP Conference Series: Materials Science and Engineering
Volume	38
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/38/1/012054
Publication status	Published - 2012
Event	International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Latvia Duration: 17 Apr 2012 → 20 Apr 2012

OECD Field of Science

1.3 Physical Sciences
2.5 Materials Engineering

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10.1088/1757-899X/38/1/012054

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Aleksiejunas, R., Ščajev, P., Nargelas, S., Miasojedovas, S., Jarašiunas, K., Trinkler, L., Grigorjeva, J., Berzina, B., Chen, K. H., Chen, Y. T., Chen, M. W., & Chen, L. C. (2012). Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap. IOP Conference Series: Materials Science and Engineering, 38(1), Article 012054. https://doi.org/10.1088/1757-899X/38/1/012054

@article{895c4143c2594bf5abc974fe6247fe57,

title = "Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap",

abstract = "We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1-xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1-xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.",

author = "R. Aleksiejunas and P. {\v S}{\v c}ajev and S. Nargelas and S. Miasojedovas and K. Jara{\v s}iunas and L. Trinkler and J. Grigorjeva and B. Berzina and Chen, \{K. H.\} and Chen, \{Y. T.\} and Chen, \{M. W.\} and Chen, \{L. C.\}",

year = "2012",

doi = "10.1088/1757-899X/38/1/012054",

language = "English",

volume = "38",

journal = "IOP Conference Series: Materials Science and Engineering",

issn = "1757-8981",

publisher = "Institute of Physics",

number = "1",

note = "International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 ; Conference date: 17-04-2012 Through 20-04-2012",

}

Aleksiejunas, R, Ščajev, P, Nargelas, S, Miasojedovas, S, Jarašiunas, K, Trinkler, L, Grigorjeva, J, Berzina, B, Chen, KH, Chen, YT, Chen, MW & Chen, LC 2012, 'Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap', IOP Conference Series: Materials Science and Engineering, vol. 38, no. 1, 012054. https://doi.org/10.1088/1757-899X/38/1/012054

TY - JOUR

T1 - Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

AU - Aleksiejunas, R.

AU - Ščajev, P.

AU - Nargelas, S.

AU - Miasojedovas, S.

AU - Jarašiunas, K.

AU - Trinkler, L.

AU - Grigorjeva, J.

AU - Berzina, B.

AU - Chen, K. H.

AU - Chen, Y. T.

AU - Chen, M. W.

AU - Chen, L. C.

PY - 2012

Y1 - 2012

N2 - We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1-xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1-xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

AB - We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1-xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1-xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

UR - https://www.scopus.com/pages/publications/84874072931

UR - https://iopscience.iop.org/article/10.1088/1757-899X/38/1/012054

U2 - 10.1088/1757-899X/38/1/012054

DO - 10.1088/1757-899X/38/1/012054

M3 - Conference article

AN - SCOPUS:84874072931

SN - 1757-8981

VL - 38

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012054

T2 - International Conference on Functional Materials and Nanotechnologies, FM and NT 2012

Y2 - 17 April 2012 through 20 April 2012

ER -

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

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OECD Field of Science

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