Changes in screen-printed ZnO/CuInSe₂ p-n junction before and after laser ablation

In the experiments, ZnO and CuInSe₂ semiconductor powders were used (the latter produced by the high-temperature synthesis method). Microstructural properties of the powders were analyzed using X-Ray diffraction and SEM. The experimental ZnO/CuInSe₂ samples were prepared by the screen printing technique. The V-I measurements of the samples indicated the presence of a p-n junction in the ZnO/CuInSe2 contact zone. The samples were exposed to artificial solar radiation, during which an exponential decay of photo-emf was observed. It was shown that the starting conductive properties of the p-n junction restores in ∼ 15 min after the exposition. Laser ablation technique was applied to ZnO/CuInSe2 p-n junction with purpose to improve its performance and quality. After several attempts, significant changes in electrical properties of samples was observed. Improvenent of p-n junction can be achieved only at single attempt at certain amount of delivered energy. Futherablation attempt leads to degradation of p-n junction of samples.