Abstract
The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is non-monotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.
| Original language | English |
|---|---|
| Pages (from-to) | 187-189 |
| Number of pages | 3 |
| Journal | Technical Physics Letters |
| Volume | 26 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2000 |
| Externally published | Yes |
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