Comparison between 2D and 3D modelling of HF electromagnetic field in FZ Silicon Crystal growth process

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research

Original language	English
Title of host publication	Proceedings of the 6th International Scientific Colloquium Modelling for Material Processing : Riga, September 16-17, 2010
Place of Publication	Rīga
Publisher	University of Latvia
Pages	61-65
Publication status	Published - 2010

OECD Field of Science

@inproceedings{3d997abe9a24433b95d4e7464ad2efa7,

title = "Comparison between 2D and 3D modelling of HF electromagnetic field in FZ Silicon Crystal growth process",

author = "Andris Mui{\v z}nieks and Uģis Lācis and Andis Rudevi{\v c}s",

year = "2010",

language = "English",

pages = "61--65",

booktitle = "Proceedings of the 6th International Scientific Colloquium Modelling for Material Processing : Riga, September 16-17, 2010",

publisher = "University of Latvia",

address = "Latvia",

}

Comparison between 2D and 3D modelling of HF electromagnetic field in FZ Silicon Crystal growth process. / Muižnieks, Andris; Lācis, Uģis; Rudevičs, Andis.
Proceedings of the 6th International Scientific Colloquium Modelling for Material Processing : Riga, September 16-17, 2010. Rīga: University of Latvia, 2010. p. 61-65.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research

TY - GEN

T1 - Comparison between 2D and 3D modelling of HF electromagnetic field in FZ Silicon Crystal growth process

AU - Muižnieks, Andris

AU - Lācis, Uģis

AU - Rudevičs, Andis

PY - 2010

Y1 - 2010

M3 - Conference paper

SP - 61

EP - 65

BT - Proceedings of the 6th International Scientific Colloquium Modelling for Material Processing : Riga, September 16-17, 2010

PB - University of Latvia

CY - Rīga

ER -