Abstract
Amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by thermal annealing and nanosecond green laser pulses. The Raman scattering spectra show that thermal annealing can provide nearly fully crystallized poly-Si film. Laser crystallization of amorphous Si is more flexible crystallization method, but it is more difficult to reach high levels of crystallinity. Depth studies of laser treated samples reveal a thin amorphous-like interlayer between substrate surface and crystallized Si film.
| Original language | English |
|---|---|
| Article number | 012035 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 23 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | International Conference on Functional Materials and Nanotechnologies, FM and NT 2011 - Riga, Latvia Duration: 5 Apr 2011 → 8 Apr 2011 |
Keywords
- a-Si
- Laser crystallization
- p-Si
- Raman scattering spectra
OECD Field of Science
- 2.10 Nano-technology
- 1.3 Physical Sciences
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