Current-voltage characteristic of n-p-p+ structures based on a chromium-compensated silicon-germanium solid solution

A. S. Saidov; A. Yu Leǐderman; B. Sapaev; S. Zh Karazhanov; D. V. Saparov

Current-voltage characteristic of n-p-p⁺ structures based on a chromium-compensated silicon-germanium solid solution

A. S. Saidov^*
, A. Yu Leǐderman
, B. Sapaev
, S. Zh Karazhanov
, D. V. Saparov

^*Corresponding author for this work

Academy of Sciences of the Republic of Uzbekistan

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Statistical currents in the n-p-p⁺ structures, synthesized on the basis of a chromium-compensated silicon-germanium solid solution, have been studied experimentally. The I-V characteristic of such structures was observed to have a section in which the current increases sublinearly with voltage V ≈ V₀exp(J_aW). The experimental results are explained on the basis of the theory of injection de;etion.

Original language	English
Pages (from-to)	550-551
Number of pages	2
Journal	Semiconductors
Volume	30
Issue number	6
Publication status	Published - Jun 1996
Externally published	Yes

Cite this

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title = "Current-voltage characteristic of n-p-p+ structures based on a chromium-compensated silicon-germanium solid solution",

abstract = "Statistical currents in the n-p-p+ structures, synthesized on the basis of a chromium-compensated silicon-germanium solid solution, have been studied experimentally. The I-V characteristic of such structures was observed to have a section in which the current increases sublinearly with voltage V ≈ V0exp(JaW). The experimental results are explained on the basis of the theory of injection de;etion.",

author = "Saidov, \{A. S.\} and Leǐderman, \{A. Yu\} and B. Sapaev and Karazhanov, \{S. Zh\} and Saparov, \{D. V.\}",

year = "1996",

month = jun,

language = "English",

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pages = "550--551",

journal = "Semiconductors",

issn = "1063-7826",

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T1 - Current-voltage characteristic of n-p-p+ structures based on a chromium-compensated silicon-germanium solid solution

AU - Saidov, A. S.

AU - Leǐderman, A. Yu

AU - Sapaev, B.

AU - Karazhanov, S. Zh

AU - Saparov, D. V.

PY - 1996/6

Y1 - 1996/6

N2 - Statistical currents in the n-p-p+ structures, synthesized on the basis of a chromium-compensated silicon-germanium solid solution, have been studied experimentally. The I-V characteristic of such structures was observed to have a section in which the current increases sublinearly with voltage V ≈ V0exp(JaW). The experimental results are explained on the basis of the theory of injection de;etion.

AB - Statistical currents in the n-p-p+ structures, synthesized on the basis of a chromium-compensated silicon-germanium solid solution, have been studied experimentally. The I-V characteristic of such structures was observed to have a section in which the current increases sublinearly with voltage V ≈ V0exp(JaW). The experimental results are explained on the basis of the theory of injection de;etion.

UR - https://www.scopus.com/pages/publications/0039609886

M3 - Article

AN - SCOPUS:0039609886

SN - 1063-7826

VL - 30

SP - 550

EP - 551

JO - Semiconductors

JF - Semiconductors

IS - 6

ER -

Current-voltage characteristic of n-p-p⁺ structures based on a chromium-compensated silicon-germanium solid solution

Abstract

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