Defect assisted intrinsic luminescence in Al2O3 crystals

P. Kulis; Z. Rachko; M. Springis; I. Tale; J. Jansons

doi:10.1080/10420159108220850

Defect assisted intrinsic luminescence in Al₂O₃ crystals

P. Kulis
, Z. Rachko
, M. Springis
, I. Tale
, J. Jansons

University of Latvia

University of Latvia

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F ⁺ - centres in pure AI₂O₃ are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered.

Original language	English
Pages (from-to)	963-968
Number of pages	6
Journal	Radiation Effects and Defects in Solids
Volume	119-121
Issue number	2
DOIs	https://doi.org/10.1080/10420159108220850
Publication status	Published - 1991

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title = "Defect assisted intrinsic luminescence in Al2O3 crystals",

abstract = "The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F + - centres in pure AI2O3 are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered.",

author = "P. Kulis and Z. Rachko and M. Springis and I. Tale and J. Jansons",

year = "1991",

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T1 - Defect assisted intrinsic luminescence in Al2O3 crystals

AU - Kulis, P.

AU - Rachko, Z.

AU - Springis, M.

AU - Tale, I.

AU - Jansons, J.

PY - 1991

Y1 - 1991

N2 - The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F + - centres in pure AI2O3 are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered.

AB - The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F + - centres in pure AI2O3 are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered.

UR - https://www.scopus.com/pages/publications/0000502821

U2 - 10.1080/10420159108220850

DO - 10.1080/10420159108220850

M3 - Article

AN - SCOPUS:0000502821

SN - 1042-0150

VL - 119-121

SP - 963

EP - 968

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 2

ER -

Defect assisted intrinsic luminescence in Al₂O₃ crystals

Abstract

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