Defects in ion implanted and electron irradiated MgO and A1203

P. Ehrhart; R. S. Averback; A. I. Popov; A. v. Sambeek

doi:10.1080/10420159508218815

Defects in ion implanted and electron irradiated MgO and A1₂0₃

P. Ehrhart
, R. S. Averback
, A. I. Popov
, A. v. Sambeek

Laboratory of Kinetics in Self-Organizing Systems, Institute of Solid State Physics

Jülich Research Centre
University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

MgO and AI₂O₃ crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e^--irradiations. No effect of an applied electric field on the defect production is observed for both oxides.

Original language	English
Pages (from-to)	169-173
Number of pages	5
Journal	Radiation Effects and Defects in Solids
Volume	136
Issue number	1-4
DOIs	https://doi.org/10.1080/10420159508218815
Publication status	Published - 1995

Keywords

AI2O3
defect agglomerates
electron irradiation
F-centers
ion implantation
MgO

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10.1080/10420159508218815

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title = "Defects in ion implanted and electron irradiated MgO and A1203 ",

abstract = "MgO and AI2O3 crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e--irradiations. No effect of an applied electric field on the defect production is observed for both oxides.",

keywords = "AI2O3, defect agglomerates, electron irradiation, F-centers, ion implantation, MgO",

author = "P. Ehrhart and Averback, \{R. S.\} and Popov, \{A. I.\} and Sambeek, \{A. v.\}",

year = "1995",

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language = "English",

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TY - JOUR

T1 - Defects in ion implanted and electron irradiated MgO and A1203

AU - Ehrhart, P.

AU - Averback, R. S.

AU - Popov, A. I.

AU - Sambeek, A. v.

PY - 1995

Y1 - 1995

N2 - MgO and AI2O3 crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e--irradiations. No effect of an applied electric field on the defect production is observed for both oxides.

AB - MgO and AI2O3 crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e--irradiations. No effect of an applied electric field on the defect production is observed for both oxides.

KW - AI2O3

KW - defect agglomerates

KW - electron irradiation

KW - F-centers

KW - ion implantation

KW - MgO

UR - https://www.scopus.com/pages/publications/0029518149

U2 - 10.1080/10420159508218815

DO - 10.1080/10420159508218815

M3 - Article

AN - SCOPUS:0029518149

SN - 1042-0150

VL - 136

SP - 169

EP - 173

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 1-4

ER -

Defects in ion implanted and electron irradiated MgO and A1₂0₃

Abstract

Keywords

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