Dependence of the properties of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers on the conditions of their growth by organometallic vapor phase epitaxy

R. Krukovskyi; Krišjānis Šmits; I. Semkiv; S. Krukovskyi; I. Saldan; H. Ilchuk; O. Kuntyi

doi:10.15407/fm27.03.482

Dependence of the properties of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers on the conditions of their growth by organometallic vapor phase epitaxy

R. Krukovskyi^*
, Krišjānis Šmits
, I. Semkiv
, S. Krukovskyi
, I. Saldan
, H. Ilchuk
, O. Kuntyi

^*Corresponding author for this work

Institute of Solid State Physics, University of Latvia

Scientific Research Company “Electron-Carat”
Lviv Polytechnic National University
Ivan Franko National University of L'viv

Research output: Contribution to journal › Article › peer-review

Abstract

The studies of GaAs (111)A and Ga₁_−XAI_XAs (111)A epitaxial layers have been carried out using low-temperature photoluminescence and high-resolution X-ray diffraction. Correlation between the B^V/A^lll ratio and the photoluminescence intensity of n-GaAs:Si layers prepared through OMVPE on a semi-insulating GaAs (111)A substrate is discussed in details. For an epitaxial layer prepared at the B^V/A^lll ratio of 94, the peak characteristic of a free exciton was found to be separated from a continuous broad edge band and higher carrier mobility was revealed. High-resolution X-ray diffraction measurements of a two-layer epitaxial n-GaAs:Si/p-Ga_1−XAI_XAs:Zn heterostructure prepared on a p-GaAs (111)A substrate indicates crystallization of structurally perfect epitaxial heterostructures with a mirror-like surface morphology.

Original language	English
Pages (from-to)	482-487
Journal	Functional Materials
Volume	27
Issue number	3
DOIs	https://doi.org/10.15407/fm27.03.482
Publication status	Published - 2020

Keywords

carrier mobility
photoluminescence

OECD Field of Science

1.3 Physical Sciences

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10.15407/fm27.03.482

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@article{871a606f95714c0f851266496606929c,

title = "Dependence of the properties of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers on the conditions of their growth by organometallic vapor phase epitaxy",

abstract = "The studies of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers have been carried out using low-temperature photoluminescence and high-resolution X-ray diffraction. Correlation between the BV/Alll ratio and the photoluminescence intensity of n-GaAs:Si layers prepared through OMVPE on a semi-insulating GaAs (111)A substrate is discussed in details. For an epitaxial layer prepared at the BV/Alll ratio of 94, the peak characteristic of a free exciton was found to be separated from a continuous broad edge band and higher carrier mobility was revealed. High-resolution X-ray diffraction measurements of a two-layer epitaxial n-GaAs:Si/p-Ga1−XAIXAs:Zn heterostructure prepared on a p-GaAs (111)A substrate indicates crystallization of structurally perfect epitaxial heterostructures with a mirror-like surface morphology.",

keywords = "carrier mobility, photoluminescence",

author = "R. Krukovskyi and Kri{\v s}jānis {\v S}mits and I. Semkiv and S. Krukovskyi and I. Saldan and H. Ilchuk and O. Kuntyi",

note = "Publisher Copyright: {\textcopyright} 2020. — STC “Institute for Single Crystals”.",

year = "2020",

doi = "10.15407/fm27.03.482",

language = "English",

volume = "27",

pages = "482--487",

journal = "Functional Materials",

issn = "1027-5495",

publisher = "Scientific and Technological Corporation",

number = "3",

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TY - JOUR

T1 - Dependence of the properties of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers on the conditions of their growth by organometallic vapor phase epitaxy

AU - Krukovskyi, R.

AU - Šmits, Krišjānis

AU - Semkiv, I.

AU - Krukovskyi, S.

AU - Saldan, I.

AU - Ilchuk, H.

AU - Kuntyi, O.

PY - 2020

Y1 - 2020

N2 - The studies of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers have been carried out using low-temperature photoluminescence and high-resolution X-ray diffraction. Correlation between the BV/Alll ratio and the photoluminescence intensity of n-GaAs:Si layers prepared through OMVPE on a semi-insulating GaAs (111)A substrate is discussed in details. For an epitaxial layer prepared at the BV/Alll ratio of 94, the peak characteristic of a free exciton was found to be separated from a continuous broad edge band and higher carrier mobility was revealed. High-resolution X-ray diffraction measurements of a two-layer epitaxial n-GaAs:Si/p-Ga1−XAIXAs:Zn heterostructure prepared on a p-GaAs (111)A substrate indicates crystallization of structurally perfect epitaxial heterostructures with a mirror-like surface morphology.

AB - The studies of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers have been carried out using low-temperature photoluminescence and high-resolution X-ray diffraction. Correlation between the BV/Alll ratio and the photoluminescence intensity of n-GaAs:Si layers prepared through OMVPE on a semi-insulating GaAs (111)A substrate is discussed in details. For an epitaxial layer prepared at the BV/Alll ratio of 94, the peak characteristic of a free exciton was found to be separated from a continuous broad edge band and higher carrier mobility was revealed. High-resolution X-ray diffraction measurements of a two-layer epitaxial n-GaAs:Si/p-Ga1−XAIXAs:Zn heterostructure prepared on a p-GaAs (111)A substrate indicates crystallization of structurally perfect epitaxial heterostructures with a mirror-like surface morphology.

KW - carrier mobility

KW - photoluminescence

UR - http://functmaterials.org.ua/contents/27-3/fm273-482.pdf

UR - https://www.scopus.com/pages/publications/85096950088

U2 - 10.15407/fm27.03.482

DO - 10.15407/fm27.03.482

M3 - Article

SN - 1027-5495

VL - 27

SP - 482

EP - 487

JO - Functional Materials

JF - Functional Materials

IS - 3

ER -

Dependence of the properties of GaAs (111)A and Ga1−XAIXAs (111)A epitaxial layers on the conditions of their growth by organometallic vapor phase epitaxy

Abstract

Keywords

OECD Field of Science

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