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Design and structural characteristics of Ga2O3/por-GaAs/mono-GaAs Heterostructures for Advanced MEMS Applications

  • Suchikova Yana
  • , Suchikova
  • , Yana
  • , Kovachov Sergii
  • , Kovachov
  • , Bohdanov Ihor
  • , Sergii
  • , Kosogov Ivan
  • , Bohdanov
  • , Drozhcha Dariya
  • , Ihor
  • , Kosogov
  • , Ivan
  • , Drozhcha
  • , Dariya
  • , Anatolijs Popovs

Research output: Chapter in Book/Report/Conference proceedingConference paperResearchpeer-review

3 Citations (Scopus)

Abstract

This study presents the synthesis and comprehensive characterization of a Ga2O3 por-GaAs/mono-GaAs heterostructure. Utilizing a combination of electrochemical etching and oxygen annealing, we have successfully fabricated a heterostructure that incorporates both crystalline and porous layers. XRD and Raman spectroscopy confirmed the presence of crystalline β-Ga2O3 and GaAs phases, while SEM analysis revealed a highly porous morphology indicative of a complex phase composition. The structural integrity and quality of the heterostructure offer promising implications for MEMS technologies, leveraging the unique properties of the composite materials for enhanced device performance.

Original languageEnglish
Title of host publication2024 IEEE 19th International Conference on the Perspective Technologies and Methods in MEMS Design, MEMSTECH 2024 - Proceedings
Pages48-51
Number of pages4
ISBN (Electronic)9798350378627
DOIs
Publication statusPublished - 2024

Publication series

NameInternational Conference on Perspective Technologies and Methods in MEMS Design
ISSN (Print)2573-5357
ISSN (Electronic)2573-5373

Keywords

  • electrochemical etching
  • Ga O
  • heterostructure
  • MEMS
  • mono-GaAs
  • oxygen annealing
  • por-GaAs
  • Raman spectroscopy
  • SEM
  • XRD

OECD Field of Science

  • 1.3 Physical Sciences

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