Abstract
Dielectric properties of epitaxial relaxor ferroelectric thin-film heterostructures were experimentally studied in a broad range of temperature, frequency, and amplitude of ac-field. Contribution of the film-electrode interfaces to the properties of the heterostructures was evaluated and the true properties of the films were reconstructed and analyzed. In the films, the Vögel-Fulcher relationship, deviation from Curie-Weiss behavior, temperature evolution of local order parameter, relaxation-time spectrum, and dielectric nonlinearity were found to be essentially similar to those in bulk relaxor ferroelectrics.
| Original language | English |
|---|---|
| Pages (from-to) | 235-240 |
| Number of pages | 6 |
| Journal | Ferroelectrics |
| Volume | 270 |
| DOIs | |
| Publication status | Published - 1 Jan 2002 |
Keywords
- Dielectric
- Epitaxial thin films
- Relaxor ferroelectric
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