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Dielectric anomalies in relaxor ferroelectric thin films

  • M. Tyunina*
  • , J. Levoska
  • , S. Leppävuori
  • , V. Zauls
  • , K. Kundzinsh
  • , M. Kundzinsh
  • *Corresponding author for this work
  • University of Oulu
  • University of Latvia

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Dielectric properties of epitaxial relaxor ferroelectric thin-film heterostructures were experimentally studied in a broad range of temperature, frequency, and amplitude of ac-field. Contribution of the film-electrode interfaces to the properties of the heterostructures was evaluated and the true properties of the films were reconstructed and analyzed. In the films, the Vögel-Fulcher relationship, deviation from Curie-Weiss behavior, temperature evolution of local order parameter, relaxation-time spectrum, and dielectric nonlinearity were found to be essentially similar to those in bulk relaxor ferroelectrics.

Original languageEnglish
Pages (from-to)235-240
Number of pages6
JournalFerroelectrics
Volume270
DOIs
Publication statusPublished - 1 Jan 2002

Keywords

  • Dielectric
  • Epitaxial thin films
  • Relaxor ferroelectric

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