Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature

Yu A. Boǐkov; D. Erts; T. Claeson; A. Yu Boǐkov

doi:10.1134/1.1521473

Dielectric response of Ba_0.75Sr_0.25TiO₃ epitaxial films to electric field and temperature

Yu A. Boǐkov^*
, D. Erts
, T. Claeson
, A. Yu Boǐkov

^*Corresponding author for this work

Ioffe Physico-Technical Institute
Chalmers University of Technology
St. Petersburg State University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO₃ ∥ (100)Ba_0.75Sr_0.25TiO₃ ∥ (001)SrRO₃ heterostructure grown by laser ablation on (001)La_0.294Sr_0.706Al_0.647Ta_0.353O ₃ were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba_0.75Sr_0.25TiO₃ layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε₀ = 4400 at T_M≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba_0.75Sr_0.25TiO₃ ferroelectric layer, observed for T < T_M, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.

Original language	English
Pages (from-to)	2157-2164
Number of pages	8
Journal	Physics of the Solid State
Volume	44
Issue number	11
DOIs	https://doi.org/10.1134/1.1521473
Publication status	Published - 1 Nov 2002
Externally published	Yes

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@article{71e62f90e18b4d3ba2bccecda4ade4cf,

title = "Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature",

abstract = "The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O 3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε0 = 4400 at TM≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T < TM, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.",

author = "Boǐkov, \{Yu A.\} and D. Erts and T. Claeson and Boǐkov, \{A. Yu\}",

year = "2002",

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doi = "10.1134/1.1521473",

language = "English",

volume = "44",

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}

TY - JOUR

T1 - Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature

AU - Boǐkov, Yu A.

AU - Erts, D.

AU - Claeson, T.

AU - Boǐkov, A. Yu

PY - 2002/11/1

Y1 - 2002/11/1

N2 - The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O 3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε0 = 4400 at TM≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T < TM, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.

AB - The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O 3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320-200 K. The real part-of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ε′/ε0 = 4400 at TM≈ 285 K (f = 100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T < TM, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.

UR - https://www.scopus.com/pages/publications/0036861422

U2 - 10.1134/1.1521473

DO - 10.1134/1.1521473

M3 - Article

AN - SCOPUS:0036861422

SN - 1063-7834

VL - 44

SP - 2157

EP - 2164

JO - Physics of the Solid State

JF - Physics of the Solid State

IS - 11

ER -

Dielectric response of Ba_0.75Sr_0.25TiO₃ epitaxial films to electric field and temperature

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