Different strategies for GaN-MoS2 and GaN-WS2 core–shell nanowire growth

One-dimensional (1D) nanostructures – nanowires (NWs) – exhibit attractive properties for integration in different types of functional devices. Their properties can be enhanced even further or tuned for a specific application by combining different promising materials, such as layered van der Waals materials and conventional semiconductors, into 1D-1D core–shell heterostructures. In this work, we demonstrated growth of GaN-MoS₂ and GaN-WS₂ core–shell NWs via two different methods: (1) two-step process of sputter-deposition of a sacrificial transition metal oxide coating on GaN NWs followed by sulfurization; (2) pulsed laser deposition of few-layer MoS₂ or WS₂ on GaN NWs from the respective material targets. As-prepared nanostructures were characterized via scanning and transmission electron microscopies, X-ray diffraction, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. High crystalline quality core–shell NW heterostructures with few-layer MoS₂ and WS₂ shells can be prepared via both routes. The experimental results were supported by theoretical electronic structure calculations, which demonstrated the potential of the synthesised core–shell NW heterostructures as photocatalysts for efficient hydrogen production from water.