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Domain structure evolution in relaxor PLZT 8/65/35 ceramics after chemical etching and electron beam irradiation

  • L. V. Gimadeeva*
  • , V. A. Shikhova
  • , D. S. Chezganov
  • , A. S. Merzliakova
  • , E. O. Vlasov
  • , V. V. Fedorovyh
  • , A. L. Kholkin
  • , B. Malič
  • , V. Ya Shur
  • *Corresponding author for this work
  • Ural Federal University
  • University of Aveiro
  • J. Stefan Institute

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Domain structure and its evolution on the surface of PLZT 8/65/35 ceramics after selective chemical etching and e-beam irradiation was studied. It is shown that the initial mixture of the nanoscale fractal-type 3D maze (fractal dimension 2.8) and micron-size domains turned into lamellar domains with periods ranging from 100 to 800 nm as a result of such procedures. The observed etch-induced change of the domain structure was attributed to the action of the depolarization field after partial removing the screening charges. The dependence of the switched domain area on irradiation time (dose) was measured in e-beam irradiated samples.

Original languageEnglish
Pages (from-to)83-92
Number of pages10
JournalFerroelectrics
Volume525
Issue number1
DOIs
Publication statusPublished - 12 Mar 2018
Externally publishedYes

Keywords

  • domain structures
  • electron beam irradiation
  • piezoresponse force microscopy
  • polarization reversal
  • Relaxor ferroelectrics
  • selective chemical etching

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