Skip to main navigation Skip to search Skip to main content

Dose effects of cathodoluminescence in SiO2 layers on Si

  • M. Goldberg*
  • , A. Trukhin
  • , H. J. Fitting
  • *Corresponding author for this work
  • University of Rostock

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Cathodoluminescence (CL) of thermal SiO2 layers is performed in a digital scanning electron microscope (SEM) and wavelength dispersed registered by a CCD-camera. The CL-spectrum of SiO2 shows three characteristic bands at 650 nm (red), 460 nm (blue) and 285 nm (UV) that all change their intensity during the time of electron bombardment. This different excitation dose behaviour of the luminescence bands was investigated in a wide range of current densities (10-5-10-3 A cm-2) and temperatures (90-500 K). Some interpretation is made by a model of precursor transformation and quenching. The UV and blue luminescence is attributed to twofold-coordinated silicon in SiO2. Contrary to thermal SiO2 films TEOS-CVD SiO2 shows only the red band which is generally associated with non-bridging oxygen.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalMaterials Science and Engineering: B
Volume42
Issue number1-3
DOIs
Publication statusPublished - 15 Dec 1996

Keywords

  • Cathodoluminescence
  • Electron bombardment
  • Silicon dioxide

Fingerprint

Dive into the research topics of 'Dose effects of cathodoluminescence in SiO2 layers on Si'. Together they form a unique fingerprint.

Cite this