Dynamics of the defects recharging in coarse-grained p-CdTe films

Kh Kh Ismailov; Zh Zhanabergenov; Sh A. Mirsagatov; S. Zh Karazhanov

doi:10.1134/S1063782606020138

Dynamics of the defects recharging in coarse-grained p-CdTe films

Kh Kh Ismailov^*
, Zh Zhanabergenov
, Sh A. Mirsagatov
, S. Zh Karazhanov

^*Corresponding author for this work

Academy of Sciences of the Republic of Uzbekistan

Research output: Contribution to journal › Article › peer-review

Abstract

The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.

Original language	English
Pages (from-to)	180-182
Number of pages	3
Journal	Semiconductors
Volume	40
Issue number	2
DOIs	https://doi.org/10.1134/S1063782606020138
Publication status	Published - Jan 2006
Externally published	Yes

Access to Document

10.1134/S1063782606020138

Cite this

@article{1d081dc9d4f7411ab2142deb667b244e,

title = "Dynamics of the defects recharging in coarse-grained p-CdTe films",

abstract = "The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.",

author = "Ismailov, \{Kh Kh\} and Zh Zhanabergenov and Mirsagatov, \{Sh A.\} and Karazhanov, \{S. Zh\}",

year = "2006",

month = jan,

doi = "10.1134/S1063782606020138",

language = "English",

volume = "40",

pages = "180--182",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "2",

}

TY - JOUR

T1 - Dynamics of the defects recharging in coarse-grained p-CdTe films

AU - Ismailov, Kh Kh

AU - Zhanabergenov, Zh

AU - Mirsagatov, Sh A.

AU - Karazhanov, S. Zh

PY - 2006/1

Y1 - 2006/1

N2 - The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.

AB - The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.

UR - https://www.scopus.com/pages/publications/33645003767

U2 - 10.1134/S1063782606020138

DO - 10.1134/S1063782606020138

M3 - Article

AN - SCOPUS:33645003767

SN - 1063-7826

VL - 40

SP - 180

EP - 182

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Dynamics of the defects recharging in coarse-grained p-CdTe films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this