Effect of a magnetic field on the crystallization of semiconductor materials by the method of crucibleless zone melting under conditions of weightlessness

To produce semiconductor crystals it is necessary to deal with the parameters of the melt flow. One method is the growth of crystals within a constant magnetic field which affects the velocity pulsation and alters the entire flow pattern in the melt zone. This article examines the effect of an axial uniform magnetic field on the heat and mass transfer within the melt zone of germanium under conditions of crystal growth in weightlessness. The results show that determination of optimum magnetic system parameters of crystal growth under weightless conditions is possible through combination of mathematical and physical modeling.