Effect of radiation-induced defects on silicon solar cells

S. Zh Karazhanov

doi:10.1063/1.1290453

Effect of radiation-induced defects on silicon solar cells

S. Zh Karazhanov^*

^*Corresponding author for this work

Academy of Sciences of the Republic of Uzbekistan

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Recent experiments indicated an anomalous degradation of n⁺ -p-p⁺ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the degradation. The effect of the radiation-induced deep defects with energy levels E_c, -0.17, E_c, -0.1, E_c -0.43, and E_v +0.36 eV on solar cells is studied in this article. It is shown that among these defects only the defect with energy level E_c -0.1 eV causes the anomalous degradation, when the base thickness W is approximately 250 μm.

Original language	English
Pages (from-to)	3941-3947
Number of pages	7
Journal	Journal of Applied Physics
Volume	88
Issue number	7
DOIs	https://doi.org/10.1063/1.1290453
Publication status	Published - Oct 2000
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1063/1.1290453

Cite this

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title = "Effect of radiation-induced defects on silicon solar cells",

abstract = "Recent experiments indicated an anomalous degradation of n+ -p-p+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the degradation. The effect of the radiation-induced deep defects with energy levels Ec, -0.17, Ec, -0.1, Ec -0.43, and Ev +0.36 eV on solar cells is studied in this article. It is shown that among these defects only the defect with energy level Ec -0.1 eV causes the anomalous degradation, when the base thickness W is approximately 250 μm.",

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AB - Recent experiments indicated an anomalous degradation of n+ -p-p+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the degradation. The effect of the radiation-induced deep defects with energy levels Ec, -0.17, Ec, -0.1, Ec -0.43, and Ev +0.36 eV on solar cells is studied in this article. It is shown that among these defects only the defect with energy level Ec -0.1 eV causes the anomalous degradation, when the base thickness W is approximately 250 μm.

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Effect of radiation-induced defects on silicon solar cells

Abstract

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