Skip to main navigation Skip to search Skip to main content

Electrical properties of lead zirconate titanate thick films prepared by hybrid sol-gel method with multiple infiltration steps

  • J. Pérez*
  • , N. P. Vyshatko
  • , P. M. Vilarinho
  • , A. L. Kholkin
  • *Corresponding author for this work
  • University of Porto
  • University of Aveiro

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

High-quality ferroelectric thick films are required for various piezoelectric applications including high-frequency transducers and microelectromechanical systems. In this work, we report the fabrication of dense crack-free lead zirconate titanate (PZT) thick films on Pt-coated Si substrates using commercial PZT powder dispersed in a sol-gel precursor solution without viscous additives. Preannealed films were infiltrated with the same solution and heat treated at 500 °C. Dielectric and ferroelectric properties of the films are found to be strongly dependent on the number of infiltration steps reaching sufficiently high values: dielectric constant ∼2270 and remanent polarization ∼35 μC cm-2. Moderate coercive field of 60 kV cm-1 and low dielectric loss ∼0.04 are observed in these films. Effective longitudinal piezoelectric coefficient d33 also depends on the number of infiltrations demonstrating remanent value of ∼80 pm V-1 for eight infiltration steps. The results show the suitability of hybrid sol-gel method for the fabrication of PZT thick films for dielectric and piezoelectric applications.

Original languageEnglish
Pages (from-to)280-284
Number of pages5
JournalMaterials Chemistry and Physics
Volume101
Issue number2-3
DOIs
Publication statusPublished - 15 Feb 2007
Externally publishedYes

Keywords

  • Actuator
  • Infiltration
  • PZT
  • Sol-gel

Fingerprint

Dive into the research topics of 'Electrical properties of lead zirconate titanate thick films prepared by hybrid sol-gel method with multiple infiltration steps'. Together they form a unique fingerprint.

Cite this