Electromechanical properties of SrBi2Ta2O9 thin films

A. L. Kholkin; K. G. Brooks; N. Setter

doi:10.1063/1.119782

Electromechanical properties of SrBi₂Ta₂O₉ thin films

A. L. Kholkin^*
, K. G. Brooks
, N. Setter

^*Corresponding author for this work

Swiss Federal Institute of Technology Lausanne
Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journal › Article › peer-review

89 Citations (Scopus)

Abstract

Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi₂Ta₂O₉ (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm² and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10^-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 10⁹ switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m⁴/C². The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.

Original language	English
Pages (from-to)	2044-2046
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	14
DOIs	https://doi.org/10.1063/1.119782
Publication status	Published - 6 Oct 1997
Externally published	Yes

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title = "Electromechanical properties of SrBi2Ta2O9 thin films",

abstract = "Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 109 switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m4/C2. The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.",

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T1 - Electromechanical properties of SrBi2Ta2O9 thin films

AU - Kholkin, A. L.

AU - Brooks, K. G.

AU - Setter, N.

PY - 1997/10/6

Y1 - 1997/10/6

N2 - Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 109 switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m4/C2. The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.

AB - Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5 · 10-4 was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 109 switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m4/C2. The electromechanical behavior of SBT films suggested no or weak contribution of non-180° domain walls to the strain response.

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JO - Applied Physics Letters

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Electromechanical properties of SrBi₂Ta₂O₉ thin films

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