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Electron-phonon coupling in Ni2+-doped MgGa2O4 spinel

  • L. Andreici*
  • , M. G. Brik
  • , N. M. Avram
  • *Corresponding author for this work
  • West University of Timisoara
  • University of Tartu
  • Academy of Romanian Scientists

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Ni2+-doped MgGa2O4 crystals, with spinel structure, have been reported as promising candidates as active media for broadband optical amplifiers and tunable laser systems in the visible and near infrared regions. In this paper we present and discuss the interaction between electronic transitions of divalent nickel ions and vibration modes of the host lattice MgGa2O4 (electron-phonon interaction), which is responsible for the wide absorption and emission broad-bands. The Huang-Rhys parameter S=3.18, the breathing phonon-energy h{stroke}ω =387 and the Zero Phonon Line (ZPL) position at 8 850 cm-1 (all estimated in the framework of the single configurational coordinate model and harmonic approximation) are reported. To check the reliability of the obtained values for S and h{stroke}ω the emission band modeling has been performed. Good agreement between theoretical and experimental emission spectra and the closeness between theoretical and experimental values of the ZPL energy confirms validity of the estimated parameters of electron-phonon interaction for MgGa2O4: Ni2+system.

Original languageEnglish
Pages (from-to)1048-1052
Number of pages5
JournalRomanian Reports in Physics
Volume63
Issue number4
Publication statusPublished - 2011
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 3 - Good Health and Well-being
    SDG 3 Good Health and Well-being

Keywords

  • Electron-phonon coupling

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