Epitaxial Tl-2201 thin films on single crystal LaAlO3: Preparation and properties

H. Q. Chen; L. G. Johansson; Z. G. Ivanov; D. Erts

doi:10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R

Epitaxial Tl-2201 thin films on single crystal LaAlO₃: Preparation and properties

H. Q. Chen^*
, L. G. Johansson
, Z. G. Ivanov
, D. Erts

^*Corresponding author for this work

University of Gothenburg
Chalmers University of Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Epitaxial Tl-2201 films have been prepared on single crystal LaAlO₃ substrates. Precursor films made by laser ablation were treated with Tl₂O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl₂O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27%. A maximum T_c of 92 K was achieved in as-annealed films.

Original language	English
Pages (from-to)	165-175
Number of pages	11
Journal	Physica Status Solidi (A) Applied Research
Volume	172
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R
Publication status	Published - Mar 1999
Externally published	Yes

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10.1002/(SICI)1521-396X(199903)172:1<165::AID-PSSA165>3.0.CO;2-R

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title = "Epitaxial Tl-2201 thin films on single crystal LaAlO3: Preparation and properties",

abstract = "Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substrates. Precursor films made by laser ablation were treated with Tl2O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl2O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27\%. A maximum Tc of 92 K was achieved in as-annealed films.",

author = "Chen, \{H. Q.\} and Johansson, \{L. G.\} and Ivanov, \{Z. G.\} and D. Erts",

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T2 - Preparation and properties

AU - Chen, H. Q.

AU - Johansson, L. G.

AU - Ivanov, Z. G.

AU - Erts, D.

PY - 1999/3

Y1 - 1999/3

N2 - Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substrates. Precursor films made by laser ablation were treated with Tl2O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl2O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27%. A maximum Tc of 92 K was achieved in as-annealed films.

AB - Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substrates. Precursor films made by laser ablation were treated with Tl2O(g) at high temperature in near-equilibrium conditions. The effects of annealing temperature, heating rate and stoichiometry of the Tl2O(g) source on the properties of the films were investigated. By optimizing the method of preparation, highly smooth, c-axis oriented and epitaxial films were obtained. The rocking curve of the (0,0,10) reflection had a FWHM of 0.27%. A maximum Tc of 92 K was achieved in as-annealed films.

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Epitaxial Tl-2201 thin films on single crystal LaAlO₃: Preparation and properties

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