Excess tunneling currents in p-Si-n-3C-SiC heterostructures

S. Zh Karazhanov; I. G. Atabaev; T. M. Saliev; É V. Kanaki; E. Dzhaksimov

doi:10.1134/1.1340293

Excess tunneling currents in p-Si-n-3C-SiC heterostructures

S. Zh Karazhanov^*
, I. G. Atabaev
, T. M. Saliev
, É V. Kanaki
, E. Dzhaksimov

^*Corresponding author for this work

Academy of Sciences of the Republic of Uzbekistan

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An attempt is made to interpret the current-voltage characteristic of a p-Si-n-3C-SiC heterostructure in terms of the excess-tunneling mechanism. The space charge region width W and tunneling length λ are estimated. It is shown that W ≫ λ and, despite this, that the current transport through the heterostructure obeys the tunneling mechanism. The characteristic tunneling energy ε = 57 meV, temperature coefficient of the saturation current, and the barrier thinness factor are found.

Original language	English
Pages (from-to)	77-79
Number of pages	3
Journal	Semiconductors
Volume	35
Issue number	1
DOIs	https://doi.org/10.1134/1.1340293
Publication status	Published - Jan 2001
Externally published	Yes

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abstract = "An attempt is made to interpret the current-voltage characteristic of a p-Si-n-3C-SiC heterostructure in terms of the excess-tunneling mechanism. The space charge region width W and tunneling length λ are estimated. It is shown that W ≫ λ and, despite this, that the current transport through the heterostructure obeys the tunneling mechanism. The characteristic tunneling energy ε = 57 meV, temperature coefficient of the saturation current, and the barrier thinness factor are found.",

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AU - Saliev, T. M.

AU - Kanaki, É V.

AU - Dzhaksimov, E.

PY - 2001/1

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AB - An attempt is made to interpret the current-voltage characteristic of a p-Si-n-3C-SiC heterostructure in terms of the excess-tunneling mechanism. The space charge region width W and tunneling length λ are estimated. It is shown that W ≫ λ and, despite this, that the current transport through the heterostructure obeys the tunneling mechanism. The characteristic tunneling energy ε = 57 meV, temperature coefficient of the saturation current, and the barrier thinness factor are found.

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Excess tunneling currents in p-Si-n-3C-SiC heterostructures

Abstract

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