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Femtosecond infrared laser annealing of PZT films on a metal substrate

  • N. Yu Firsova
  • , E. D. Mishina
  • , A. S. Sigov*
  • , S. V. Senkevich
  • , I. P. Pronin
  • , A. Kholkin
  • , I. Bdikin
  • , Yu I. Yuzyuk
  • *Corresponding author for this work
  • MIREA - Russian Technological University
  • Ioffe Physico-Technical Institute
  • University of Aveiro
  • Southern Federal University

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The quazi-amorphous PbZrTiO 2 (PZT) precursor film on a platinized silicon substrate is annealed by femtosecond laser at the wavelength falling into transparency band of PZT. Two areas are found within the laser spot: ferroelectric perovskite revealing strong hysteresis and coercivity in piezoelectric response and paraelectric with low piezoresponse and the absence of hysteresis and coercivity. Annealing takes place through platinum absorbing laser irradiation and acting as a heat source for transparent film on top of it.

Original languageEnglish
Pages (from-to)164-169
Number of pages6
JournalFerroelectrics
Volume433
Issue number1
DOIs
Publication statusPublished - 1 Jan 2012
Externally publishedYes

Keywords

  • femtosecond laser annealing
  • ferroelectric
  • piezoelectric
  • Raman scattering
  • second harmonic generation
  • Sol-gel
  • thin films

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