Abstract
The electronic and atomic structure of a bulk 2D layered van-der-Waals compound CdPS3 was studied in the low (R3) and room (C2/m) temperature phases using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid meta exchange-correlation M06 functional. The calculation results reproduce well the experimental crystallographic parameters. The value of the indirect band gap Eg = 3.4 eV for the room-temperature monoclinic C2/m phase is close to the experimental one, while the indirect band gap Eg = 3.3 eV was predicted for the low-temperature trigonal R3 phase. The effect of hydrostatic pressure on the band gap in both phases was studied in the pressure range from 0 to 40 GPa. In both cases, the pressure dependence of the band gap passes through a maximum, but at different pressures. In the R3 phase, the band gap reaches its maximum value of ∼ 4 eV at ∼ 30 GPa, whereas in the C2/m phase, the maximum value of ∼ 3.6 eV is reached already at ∼ 8 GPa.
| Original language | English |
|---|---|
| Pages (from-to) | 1430-1436 |
| Number of pages | 7 |
| Journal | Fizika Nizkikh Temperatur |
| Volume | 46 |
| Issue number | 12 |
| Publication status | Published - Dec 2020 |
Keywords
- CdPS3
- Electronic structure
- First-principles calculations
- High pressure
- Layered compound
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