Formation of deep acceptor centers in AlGaN alloys

L. Dimitrocenko; J. Grube; P. Kulis; G. Marcins; B. Polyakov; A. Sarakovskis; M. Springis; I. Tale

doi:10.1117/12.816864

Formation of deep acceptor centers in AlGaN alloys

L. Dimitrocenko^*
, J. Grube
, P. Kulis
, G. Marcins
, B. Polyakov
, A. Sarakovskis
, M. Springis
, I. Tale

^*Corresponding author for this work

University of Latvia

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

Abstract

AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the Al_xGa_1-xN (0 < × < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor - deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (V_cation) defects acting as a deep acceptor centers and responsible for PL. Si-doping results in both the additional increase of V_cation concentration and the formation in cation sub lattice of new (V_cationSi_cation) deep acceptor complexes. It is shown that by increase of the Al content in the AlGaN alloy the composition disorder of both deep acceptor centers V_cation and (V_cationSi_cation) complex appears. The corresponding broad PL bands are resolved in number of subbands. It is stated that deposition of Si-doped AlGaN alloy on undoped GaN results in formation of Si-doped GaN interlayer.

Original language	English
Title of host publication	Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)
DOIs	https://doi.org/10.1117/12.816864
Publication status	Published - 2008
Event	6th International Conference on Advanced Optical Materials and Devices, AOMD-6 - Riga, Latvia Duration: 24 Aug 2008 → 27 Aug 2008

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7142
ISSN (Print)	0277-786X

Conference

Conference	6th International Conference on Advanced Optical Materials and Devices, AOMD-6
Country/Territory	Latvia
City	Riga
Period	24/08/08 → 27/08/08

Keywords

DA luminescence
Deep acceptor states
Defect structure
Group III nitride
Interface layers
Thin film
Vacancy - impurity complex

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10.1117/12.816864

Cite this

Dimitrocenko, L., Grube, J., Kulis, P., Marcins, G., Polyakov, B., Sarakovskis, A., Springis, M., & Tale, I. (2008). Formation of deep acceptor centers in AlGaN alloys. In Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6) Article 71420P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7142). https://doi.org/10.1117/12.816864

@inproceedings{b8cbd7945b6f4fb6a445ff8d1a351e7c,

title = "Formation of deep acceptor centers in AlGaN alloys",

abstract = "AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < {\texttimes} < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor - deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defects acting as a deep acceptor centers and responsible for PL. Si-doping results in both the additional increase of Vcation concentration and the formation in cation sub lattice of new (VcationSication) deep acceptor complexes. It is shown that by increase of the Al content in the AlGaN alloy the composition disorder of both deep acceptor centers Vcation and (VcationSication) complex appears. The corresponding broad PL bands are resolved in number of subbands. It is stated that deposition of Si-doped AlGaN alloy on undoped GaN results in formation of Si-doped GaN interlayer.",

keywords = "DA luminescence, Deep acceptor states, Defect structure, Group III nitride, Interface layers, Thin film, Vacancy - impurity complex",

author = "L. Dimitrocenko and J. Grube and P. Kulis and G. Marcins and B. Polyakov and A. Sarakovskis and M. Springis and I. Tale",

year = "2008",

doi = "10.1117/12.816864",

language = "English",

isbn = "9780819473844",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)",

note = "6th International Conference on Advanced Optical Materials and Devices, AOMD-6 ; Conference date: 24-08-2008 Through 27-08-2008",

}

Dimitrocenko, L, Grube, J, Kulis, P, Marcins, G, Polyakov, B , Sarakovskis, A, Springis, M & Tale, I 2008, Formation of deep acceptor centers in AlGaN alloys. in Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)., 71420P, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7142, 6th International Conference on Advanced Optical Materials and Devices, AOMD-6, Riga, Latvia, 24/08/08. https://doi.org/10.1117/12.816864

Formation of deep acceptor centers in AlGaN alloys. / Dimitrocenko, L.; Grube, J.; Kulis, P. et al.
Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6). 2008. 71420P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7142).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

TY - GEN

T1 - Formation of deep acceptor centers in AlGaN alloys

AU - Dimitrocenko, L.

AU - Grube, J.

AU - Kulis, P.

AU - Marcins, G.

AU - Polyakov, B.

AU - Sarakovskis, A.

AU - Springis, M.

AU - Tale, I.

PY - 2008

Y1 - 2008

N2 - AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < × < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor - deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defects acting as a deep acceptor centers and responsible for PL. Si-doping results in both the additional increase of Vcation concentration and the formation in cation sub lattice of new (VcationSication) deep acceptor complexes. It is shown that by increase of the Al content in the AlGaN alloy the composition disorder of both deep acceptor centers Vcation and (VcationSication) complex appears. The corresponding broad PL bands are resolved in number of subbands. It is stated that deposition of Si-doped AlGaN alloy on undoped GaN results in formation of Si-doped GaN interlayer.

AB - AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < × < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor - deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defects acting as a deep acceptor centers and responsible for PL. Si-doping results in both the additional increase of Vcation concentration and the formation in cation sub lattice of new (VcationSication) deep acceptor complexes. It is shown that by increase of the Al content in the AlGaN alloy the composition disorder of both deep acceptor centers Vcation and (VcationSication) complex appears. The corresponding broad PL bands are resolved in number of subbands. It is stated that deposition of Si-doped AlGaN alloy on undoped GaN results in formation of Si-doped GaN interlayer.

KW - DA luminescence

KW - Deep acceptor states

KW - Defect structure

KW - Group III nitride

KW - Interface layers

KW - Thin film

KW - Vacancy - impurity complex

UR - https://www.scopus.com/pages/publications/69949091558

U2 - 10.1117/12.816864

DO - 10.1117/12.816864

M3 - Conference paper

AN - SCOPUS:69949091558

SN - 9780819473844

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)

T2 - 6th International Conference on Advanced Optical Materials and Devices, AOMD-6

Y2 - 24 August 2008 through 27 August 2008

ER -

Formation of deep acceptor centers in AlGaN alloys

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Keywords

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