Formation of dislocations in LiF irradiated with 3He and 4He ions

I. Manika; R. Zabels; J. Maniks; K. Schwartz; R. Grants; T. Krasta; A. Kuzmin

doi:10.1016/j.jnucmat.2018.05.005

Formation of dislocations in LiF irradiated with ³He and ⁴He ions

I. Manika^*
, R. Zabels
, J. Maniks
, K. Schwartz
, R. Grants
, T. Krasta
, A. Kuzmin

^*Corresponding author for this work

University of Latvia
GSI Helmholtz Centre for Heavy Ion Research

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Influence of the irradiation with 13.5 MeV ³He and 5 MeV ⁴He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (10¹⁵ ions/cm²) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structure and properties. The effects of ion-induced increase of hardness and decrease of dislocation mobility are observed also beyond the ion range and possible mechanisms of such damage are discussed.

Original language	English
Pages (from-to)	241-247
Number of pages	7
Journal	Journal of Nuclear Materials
Volume	507
DOIs	https://doi.org/10.1016/j.jnucmat.2018.05.005
Publication status	Published - 15 Aug 2018

Keywords

He and He ions
Damage beyond the ion range
Dislocations
Ion-irradiation
LiF crystals
Nanoindentation
Photoluminescence

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10.1016/j.jnucmat.2018.05.005

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@article{c3e16730c33443a485f9ad00ed780df5,

title = "Formation of dislocations in LiF irradiated with 3He and 4He ions",

abstract = "Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structure and properties. The effects of ion-induced increase of hardness and decrease of dislocation mobility are observed also beyond the ion range and possible mechanisms of such damage are discussed.",

keywords = "He and He ions, Damage beyond the ion range, Dislocations, Ion-irradiation, LiF crystals, Nanoindentation, Photoluminescence",

author = "I. Manika and R. Zabels and J. Maniks and K. Schwartz and R. Grants and T. Krasta and A. Kuzmin",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = aug,

day = "15",

doi = "10.1016/j.jnucmat.2018.05.005",

language = "English",

volume = "507",

pages = "241--247",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Formation of dislocations in LiF irradiated with 3He and 4He ions

AU - Manika, I.

AU - Zabels, R.

AU - Maniks, J.

AU - Schwartz, K.

AU - Grants, R.

AU - Krasta, T.

AU - Kuzmin, A.

PY - 2018/8/15

Y1 - 2018/8/15

N2 - Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structure and properties. The effects of ion-induced increase of hardness and decrease of dislocation mobility are observed also beyond the ion range and possible mechanisms of such damage are discussed.

AB - Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structure and properties. The effects of ion-induced increase of hardness and decrease of dislocation mobility are observed also beyond the ion range and possible mechanisms of such damage are discussed.

KW - He and He ions

KW - Damage beyond the ion range

KW - Dislocations

KW - Ion-irradiation

KW - LiF crystals

KW - Nanoindentation

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/85046739731

U2 - 10.1016/j.jnucmat.2018.05.005

DO - 10.1016/j.jnucmat.2018.05.005

M3 - Article

AN - SCOPUS:85046739731

SN - 0022-3115

VL - 507

SP - 241

EP - 247

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

ER -

Formation of dislocations in LiF irradiated with ³He and ⁴He ions

Abstract

Keywords

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