High-quality PbZr0.52Ti0.48O3 films prepared by modified sol-gel route at low temperature

J. Perez; P. M. Vilarinho; A. L. Kholkin

doi:10.1016/j.tsf.2003.10.104

High-quality PbZr_0.52Ti_0.48O₃ films prepared by modified sol-gel route at low temperature

J. Perez
, P. M. Vilarinho
, A. L. Kholkin^*

^*Corresponding author for this work

University of Aveiro

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr_0.52Ti_0.48O₃ (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm² and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.

Original language	English
Pages (from-to)	20-24
Number of pages	5
Journal	Thin Solid Films
Volume	449
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2003.10.104
Publication status	Published - 2 Feb 2004
Externally published	Yes

Keywords

Crystallization
Dielectric properties
Growth mechanism

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10.1016/j.tsf.2003.10.104

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title = "High-quality PbZr0.52Ti0.48O3 films prepared by modified sol-gel route at low temperature",

abstract = "A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20\%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.",

keywords = "Crystallization, Dielectric properties, Growth mechanism",

author = "J. Perez and Vilarinho, \{P. M.\} and Kholkin, \{A. L.\}",

year = "2004",

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doi = "10.1016/j.tsf.2003.10.104",

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TY - JOUR

T1 - High-quality PbZr0.52Ti0.48O3 films prepared by modified sol-gel route at low temperature

AU - Perez, J.

AU - Vilarinho, P. M.

AU - Kholkin, A. L.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.

AB - A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 °C possess a dielectric permittivity of ∼1900, a remanent polarization of ∼30 μC/cm2 and a coercive field of ∼60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems.

KW - Crystallization

KW - Dielectric properties

KW - Growth mechanism

UR - https://www.scopus.com/pages/publications/1042292766

U2 - 10.1016/j.tsf.2003.10.104

DO - 10.1016/j.tsf.2003.10.104

M3 - Article

AN - SCOPUS:1042292766

SN - 0040-6090

VL - 449

SP - 20

EP - 24

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

High-quality PbZr_0.52Ti_0.48O₃ films prepared by modified sol-gel route at low temperature

Abstract

Keywords

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