High-speed optoelectronics receivers in SiGe

Amit Gupta; Steven P. Levitan; Leo Selavo; Donald M. Chiarulli

High-speed optoelectronics receivers in SiGe

Amit Gupta^*
, Steven P. Levitan
, Leo Selavo
, Donald M. Chiarulli

^*Corresponding author for this work

University of Pittsburgh

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

This paper focuses on the investigation of integrated CMOS and Silicon/Germanium (SiGe) devices for highspeed optical receiver circuits. In this paper, we present several competitive designs of front-end transimpedance amplifiers (TIA) for optical receiver applications using the IBM 5HP (0.5micron) SiGe technology. This technology exhibits f _T and f _MAX of 47GHz and 65GHz respectively. Spectre simulations in the Cadence Affirma analog design environment are conducted for both the TIA's and a complete receiver circuit consisting of a TIA, a cascaded multi-stage differential amplifier and a multi-stage inverting amplifier at the single supply voltage of 3.3 V. We also discuss the practicality of using SiGe based photodetectors for 1.3-1.5um wavelength light and the use of Neolinear's NeoCircuit/NeoCell mixed signal design tools for optimization of the analog circuits.

Original language	English
Pages (from-to)	957-960
Number of pages	4
Journal	Proceedings of the IEEE International Conference on VLSI Design
Volume	17
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings - 17th International Conference on VLSI Design, Concurrently with the 3rd International Conference on Embedded Systems Design - Mumbai, India Duration: 5 Jan 2004 → 9 Jan 2004

Cite this

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title = "High-speed optoelectronics receivers in SiGe",

abstract = "This paper focuses on the investigation of integrated CMOS and Silicon/Germanium (SiGe) devices for highspeed optical receiver circuits. In this paper, we present several competitive designs of front-end transimpedance amplifiers (TIA) for optical receiver applications using the IBM 5HP (0.5micron) SiGe technology. This technology exhibits f T and f MAX of 47GHz and 65GHz respectively. Spectre simulations in the Cadence Affirma analog design environment are conducted for both the TIA's and a complete receiver circuit consisting of a TIA, a cascaded multi-stage differential amplifier and a multi-stage inverting amplifier at the single supply voltage of 3.3 V. We also discuss the practicality of using SiGe based photodetectors for 1.3-1.5um wavelength light and the use of Neolinear's NeoCircuit/NeoCell mixed signal design tools for optimization of the analog circuits.",

author = "Amit Gupta and Levitan, \{Steven P.\} and Leo Selavo and Chiarulli, \{Donald M.\}",

year = "2004",

language = "English",

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journal = "Proceedings of the IEEE International Conference on VLSI Design",

issn = "1063-9667",

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note = "Proceedings - 17th International Conference on VLSI Design, Concurrently with the 3rd International Conference on Embedded Systems Design ; Conference date: 05-01-2004 Through 09-01-2004",

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T1 - High-speed optoelectronics receivers in SiGe

AU - Gupta, Amit

AU - Levitan, Steven P.

AU - Selavo, Leo

AU - Chiarulli, Donald M.

PY - 2004

Y1 - 2004

N2 - This paper focuses on the investigation of integrated CMOS and Silicon/Germanium (SiGe) devices for highspeed optical receiver circuits. In this paper, we present several competitive designs of front-end transimpedance amplifiers (TIA) for optical receiver applications using the IBM 5HP (0.5micron) SiGe technology. This technology exhibits f T and f MAX of 47GHz and 65GHz respectively. Spectre simulations in the Cadence Affirma analog design environment are conducted for both the TIA's and a complete receiver circuit consisting of a TIA, a cascaded multi-stage differential amplifier and a multi-stage inverting amplifier at the single supply voltage of 3.3 V. We also discuss the practicality of using SiGe based photodetectors for 1.3-1.5um wavelength light and the use of Neolinear's NeoCircuit/NeoCell mixed signal design tools for optimization of the analog circuits.

AB - This paper focuses on the investigation of integrated CMOS and Silicon/Germanium (SiGe) devices for highspeed optical receiver circuits. In this paper, we present several competitive designs of front-end transimpedance amplifiers (TIA) for optical receiver applications using the IBM 5HP (0.5micron) SiGe technology. This technology exhibits f T and f MAX of 47GHz and 65GHz respectively. Spectre simulations in the Cadence Affirma analog design environment are conducted for both the TIA's and a complete receiver circuit consisting of a TIA, a cascaded multi-stage differential amplifier and a multi-stage inverting amplifier at the single supply voltage of 3.3 V. We also discuss the practicality of using SiGe based photodetectors for 1.3-1.5um wavelength light and the use of Neolinear's NeoCircuit/NeoCell mixed signal design tools for optimization of the analog circuits.

UR - https://www.scopus.com/pages/publications/2342527095

M3 - Conference article

AN - SCOPUS:2342527095

SN - 1063-9667

VL - 17

SP - 957

EP - 960

JO - Proceedings of the IEEE International Conference on VLSI Design

JF - Proceedings of the IEEE International Conference on VLSI Design

T2 - Proceedings - 17th International Conference on VLSI Design, Concurrently with the 3rd International Conference on Embedded Systems Design

Y2 - 5 January 2004 through 9 January 2004

ER -

High-speed optoelectronics receivers in SiGe

Abstract

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