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Hole self-trapping and recombination in LiBaF3

  • I. Tale*
  • , H. J. Fitting
  • , P. Kulis
  • , V. Ogorodnik
  • , U. Rogulis
  • , M. Spriņģis
  • , V. Tale
  • , J. Trokšs
  • , A. Veispals
  • *Corresponding author for this work
  • University of Rostock
  • University of Latvia

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

We investigated the electron paramagnetic resonance (EPR), recombination afterglow and thermostimulated luminescence (TSL) of the X-irradiated LiBaF3 crystals. After X-irradiation at 80 K, an EPR of the self-trapped hole centre VK (F2-) oriented along the [110] axis is identified. X-irradiation at temperatures below 200 K results in a creation of a long-term temperature-independent afterglow - tunnelling luminescence (TL), with main emission bands at 300, 430 and 430 nm. The short wavelength TL bands are associated with the tunnelling recombination of the electron centre with the VK centre, with thermal stability estimated to be about 130 K.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalRadiation Effects and Defects in Solids
Volume149
Issue number1 -4 pt 1
DOIs
Publication statusPublished - 1999
EventProceedings of the 1998 8th Europhysical Conference on Defects in Insulating Materials, EURODIM 98 - Keele, UK
Duration: 6 Jun 199811 Jun 1998

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