Host-defect luminescence of stishovite

A. Trukhin; P. Kulis; J. Jansons; T. Dyuzheva; L. Lityagina; N. Bendeliani

doi:10.1002/pssc.200460240

Host-defect luminescence of stishovite

A. Trukhin^*
, P. Kulis
, J. Jansons
, T. Dyuzheva
, L. Lityagina
, N. Bendeliani

^*Corresponding author for this work

University of Latvia
Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO₂ with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of μs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminescence band in α-quartz, which could not be created by X-ray. The latter being associated with transient centres created by destructive electron-beam irradiation or with permanent centres at neutron or γ-irradiation, and with oxygen-deficient luminescence of silica glass.

Original language	English
Pages (from-to)	584-587
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200460240
Publication status	Published - 2005

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title = "Host-defect luminescence of stishovite",

abstract = "A detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of μs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminescence band in α-quartz, which could not be created by X-ray. The latter being associated with transient centres created by destructive electron-beam irradiation or with permanent centres at neutron or γ-irradiation, and with oxygen-deficient luminescence of silica glass.",

author = "A. Trukhin and P. Kulis and J. Jansons and T. Dyuzheva and L. Lityagina and N. Bendeliani",

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T1 - Host-defect luminescence of stishovite

AU - Trukhin, A.

AU - Kulis, P.

AU - Jansons, J.

AU - Dyuzheva, T.

AU - Lityagina, L.

AU - Bendeliani, N.

PY - 2005

Y1 - 2005

N2 - A detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of μs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminescence band in α-quartz, which could not be created by X-ray. The latter being associated with transient centres created by destructive electron-beam irradiation or with permanent centres at neutron or γ-irradiation, and with oxygen-deficient luminescence of silica glass.

AB - A detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of μs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminescence band in α-quartz, which could not be created by X-ray. The latter being associated with transient centres created by destructive electron-beam irradiation or with permanent centres at neutron or γ-irradiation, and with oxygen-deficient luminescence of silica glass.

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DO - 10.1002/pssc.200460240

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

ER -

Host-defect luminescence of stishovite

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