Hydrodynamical aspects of the floating zone silicon crystal growth process

Kirils Surovovs; Andris Muiznieks; Andrejs Sabanskis; Janis Virbulis

doi:10.1016/j.jcrysgro.2013.12.066

Hydrodynamical aspects of the floating zone silicon crystal growth process

Kirils Surovovs^*
, Andris Muiznieks
, Andrejs Sabanskis
, Janis Virbulis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

3D numerical modeling of dopant transport in the melt is carried out for the 100 mm floating zone silicon single crystal growth process. The axis-symmetric shape of the molten zone is calculated with the program FZone considering the coil and the high frequency (HF) electromagnetic (EM) field in 3D. Time dependent melt flow, temperature and dopant concentration fields are modeled using a specialized solver based on the open source code library OpenFOAM®. The influence of the Marangoni coefficient in the boundary conditions on the melt velocity field is analyzed. The obtained shapes of the crystallization interface and resistivity profiles in the grown crystal are compared with experimental results. Differences between axis-symmetric and non-symmetric models are analyzed.

Original language	English
Pages (from-to)	120-123
Number of pages	4
Journal	Journal of Crystal Growth
Volume	401
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.12.066
Publication status	Published - 1 Sept 2014

Keywords

A1. Computer simulation
A1. Hydrodynamics
A2. Floating zone technique
A2. Single crystal growth
B2. Semiconducting silicon

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10.1016/j.jcrysgro.2013.12.066

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title = "Hydrodynamical aspects of the floating zone silicon crystal growth process",

abstract = "3D numerical modeling of dopant transport in the melt is carried out for the 100 mm floating zone silicon single crystal growth process. The axis-symmetric shape of the molten zone is calculated with the program FZone considering the coil and the high frequency (HF) electromagnetic (EM) field in 3D. Time dependent melt flow, temperature and dopant concentration fields are modeled using a specialized solver based on the open source code library OpenFOAM{\textregistered}. The influence of the Marangoni coefficient in the boundary conditions on the melt velocity field is analyzed. The obtained shapes of the crystallization interface and resistivity profiles in the grown crystal are compared with experimental results. Differences between axis-symmetric and non-symmetric models are analyzed.",

keywords = "A1. Computer simulation, A1. Hydrodynamics, A2. Floating zone technique, A2. Single crystal growth, B2. Semiconducting silicon",

author = "Kirils Surovovs and Andris Muiznieks and Andrejs Sabanskis and Janis Virbulis",

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doi = "10.1016/j.jcrysgro.2013.12.066",

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AU - Surovovs, Kirils

AU - Muiznieks, Andris

AU - Sabanskis, Andrejs

AU - Virbulis, Janis

PY - 2014/9/1

Y1 - 2014/9/1

N2 - 3D numerical modeling of dopant transport in the melt is carried out for the 100 mm floating zone silicon single crystal growth process. The axis-symmetric shape of the molten zone is calculated with the program FZone considering the coil and the high frequency (HF) electromagnetic (EM) field in 3D. Time dependent melt flow, temperature and dopant concentration fields are modeled using a specialized solver based on the open source code library OpenFOAM®. The influence of the Marangoni coefficient in the boundary conditions on the melt velocity field is analyzed. The obtained shapes of the crystallization interface and resistivity profiles in the grown crystal are compared with experimental results. Differences between axis-symmetric and non-symmetric models are analyzed.

AB - 3D numerical modeling of dopant transport in the melt is carried out for the 100 mm floating zone silicon single crystal growth process. The axis-symmetric shape of the molten zone is calculated with the program FZone considering the coil and the high frequency (HF) electromagnetic (EM) field in 3D. Time dependent melt flow, temperature and dopant concentration fields are modeled using a specialized solver based on the open source code library OpenFOAM®. The influence of the Marangoni coefficient in the boundary conditions on the melt velocity field is analyzed. The obtained shapes of the crystallization interface and resistivity profiles in the grown crystal are compared with experimental results. Differences between axis-symmetric and non-symmetric models are analyzed.

KW - A1. Computer simulation

KW - A1. Hydrodynamics

KW - A2. Floating zone technique

KW - A2. Single crystal growth

KW - B2. Semiconducting silicon

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DO - 10.1016/j.jcrysgro.2013.12.066

M3 - Article

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VL - 401

SP - 120

EP - 123

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Hydrodynamical aspects of the floating zone silicon crystal growth process

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Keywords

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