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Hydrogen adsorption on the ZnO (1100) surface: Ab initio hybrid density functional linear combination of atomic orbitals calculations

  • L.N. Gumilyov Eurasian National University
  • Max Planck Institute for Solid State Research
  • University of Latvia

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Hydrogen atoms unavoidably presented in ZnO samples or thin films during their synthesis considerably affect electrical conductivity. Results of first principles hybrid functional linear combination of atomic orbitals calculations are discussed for hydrogen atoms incorporated in bulk or adsorbed upon non-polar ZnO (1100) surfaces. The energy of H incorporation, atomic relaxation, electronic density redistribution and modification of the electronic structure are compared for both surface adsorption and bulk absorption. It is shown that hydrogen forms a strong bonding with the surface O ions (Eads = 2.7 eV) whereas its incorporation into bulk is energetically quite unfavorable. Hydrogen adsorption reduces the surface energy. Surface hydrogen atoms are very shallow donors, thus contributing to the electronic conductivity and ZnO metallization.

Original languageEnglish
Article number045801
JournalPhysica Scripta
Volume89
Issue number4
DOIs
Publication statusPublished - Apr 2014

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • hydrogen incorporation
  • shallow donor
  • surface relaxation and metallization
  • zinc oxide

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