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Hydrogen induced metallization of ZnO (11Ì...00) surface: Ab initio study

  • A. B. Usseinov*
  • , E. A. Kotomin
  • , A. T. Akilbekov
  • , Yu F. Zhukovskii
  • , J. Purans
  • *Corresponding author for this work
  • L.N. Gumilyov Eurasian National University
  • University of Latvia

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Results of first principles hybrid calculations are presented for hydrogen atoms adsorbed upon non-polar ZnO (11Ì...00) surface. The energy of surface atomic relaxation, H adsorption energy, electronic density redistribution and modification of the electronic structure are discussed. It is shown that hydrogen is adsorbed mainly on the surface oxygen ions and forms a strong bonding with them (2.7 eV). Adsorption of hydrogen on the surface zinc ions is energetically unfavorable (- 4.4 eV). It also shown that surface hydrogen atoms are very shallow donors, thus, contributing to the electronic conductivity, and ZnO metallization.

Original languageEnglish
Pages (from-to)38-42
Number of pages5
JournalThin Solid Films
Volume553
DOIs
Publication statusPublished - 28 Feb 2014

Keywords

  • Hydrogen adsorption
  • Hydrogenation
  • Surface metallization
  • Surface relaxation
  • Zinc oxide

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