Abstract
Influence of the structure ordering, modification and defects on the properties in ferroelectric ceramics and thin films are investigated. Structural changes in perovskite type compounds with general formula (1-x)Pb(B3+,Nb)TiO3- xPbTiO3are realized by variation of it composition (by exchange of ions B3+in B sublattice). The crystallographic features of Pb(Lu1/2Nb1/2)O3 - PbTiO3(PLuNT) and PbSc1/2Nb1/2O3-PbLu1/2Nb1/2O3(PSN-PLuN) compounds are discussed with respect to dielectric, polarization and electro-mechanical properties. The heterovalent substitution of Pb2+by La3+in PLuNT ceramics either in both components and maintaining the PbTiO3unmodified shifts the MPB to the pseudomonoclinic side of phase diagram. The initial unmodified material"softens - coercive field Ecdecreases and simultaneously high values of maximum and remnant polarization are characteristic.Antiferroelectric thin films display higher radiation resistance than ferroelectric heterostructures up to a neutron fluence of 2×1022m-2(E 0.1 MeV). The strong dependence of radiation-induced change of properties from the quality of the films (epitaxial versus polycrystalline) was found.
| Original language | English |
|---|---|
| Pages (from-to) | 283-288 |
| Number of pages | 6 |
| Journal | Ferroelectrics |
| Volume | 298 |
| DOIs | |
| Publication status | Published - 1 Jan 2004 |
Keywords
- Binary systems
- Electromechanical properties
- Ferroelectric and antiferroelectric thin films
- La doping
- Neutron irradiation
- Phase diagram
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