Impedance and admittance characteristics of Bi2S3 nanowire arrays

J. Katkevics; G. Kunakova; A. Viksna; J. D. Holmes; D. Erts

doi:10.1088/1757-899X/49/1/012007

Impedance and admittance characteristics of Bi₂S₃ nanowire arrays

J. Katkevics
, G. Kunakova
, A. Viksna
, J. D. Holmes
, D. Erts

University College Cork

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi₂S₃) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi₂S₃ nanowire arrays were studied.

Original language	English
Article number	012007
Journal	IOP Conference Series: Materials Science and Engineering
Volume	49
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/49/1/012007
Publication status	Published - 2013
Event	International Conference on Functional Materials and Nanotechnologies 2013, FM and NT 2013 - Tartu, Estonia Duration: 21 Apr 2013 → 24 Apr 2013

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10.1088/1757-899X/49/1/012007

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title = "Impedance and admittance characteristics of Bi2S3 nanowire arrays",

abstract = "Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.",

author = "J. Katkevics and G. Kunakova and A. Viksna and Holmes, \{J. D.\} and D. Erts",

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T1 - Impedance and admittance characteristics of Bi2S3 nanowire arrays

AU - Katkevics, J.

AU - Kunakova, G.

AU - Viksna, A.

AU - Holmes, J. D.

AU - Erts, D.

PY - 2013

Y1 - 2013

N2 - Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.

AB - Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.

UR - https://www.scopus.com/pages/publications/84893677294

U2 - 10.1088/1757-899X/49/1/012007

DO - 10.1088/1757-899X/49/1/012007

M3 - Conference article

AN - SCOPUS:84893677294

SN - 1757-8981

VL - 49

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012007

T2 - International Conference on Functional Materials and Nanotechnologies 2013, FM and NT 2013

Y2 - 21 April 2013 through 24 April 2013

ER -

Impedance and admittance characteristics of Bi₂S₃ nanowire arrays

Abstract

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