Influence of the domain structure on piezoelectric and dielectric properties of relaxor SBN single crystals

V. A. Shikhova; A. D. Ushakov; V. V. Fedorovyh; V. A. Anikin; A. A. Esin; V. Ya Shur; A. L. Kholkin; L. I. Ivleva

doi:10.1088/1757-899X/443/1/012031

Influence of the domain structure on piezoelectric and dielectric properties of relaxor SBN single crystals

V. A. Shikhova
, A. D. Ushakov
, V. V. Fedorovyh
, V. A. Anikin
, A. A. Esin
, V. Ya Shur
, A. L. Kholkin
, L. I. Ivleva

Ural Federal University
University of Aveiro
Prokhorov General Physics Institute of the Russian Academy of Sciences

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

We have studied the influence of initial domain structure on piezoelectric and dielectric properties of Sr_0.61Ba_0.39Nb₂O₆ single crystals slightly doped with Ce and Ni. Initial domain structure was created by zero-field cooling, in-field cooling, and partial switching. The difference in the frequency dependences of macroscopic piezoelectric response and temperature dependences of dielectric permittivity for various initial domain structures was revealed.

Original language	English
Article number	012031
Journal	IOP Conference Series: Materials Science and Engineering
Volume	443
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/443/1/012031
Publication status	Published - 14 Nov 2018
Externally published	Yes
Event	International Conference on Scanning Probe Microscopy, SPM 2018 - Ekaterinburg, Russian Federation Duration: 26 Aug 2018 → 29 Aug 2018

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10.1088/1757-899X/443/1/012031

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title = "Influence of the domain structure on piezoelectric and dielectric properties of relaxor SBN single crystals",

abstract = "We have studied the influence of initial domain structure on piezoelectric and dielectric properties of Sr0.61Ba0.39Nb2O6 single crystals slightly doped with Ce and Ni. Initial domain structure was created by zero-field cooling, in-field cooling, and partial switching. The difference in the frequency dependences of macroscopic piezoelectric response and temperature dependences of dielectric permittivity for various initial domain structures was revealed.",

author = "Shikhova, \{V. A.\} and Ushakov, \{A. D.\} and Fedorovyh, \{V. V.\} and Anikin, \{V. A.\} and Esin, \{A. A.\} and Shur, \{V. Ya\} and Kholkin, \{A. L.\} and Ivleva, \{L. I.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Institute of Physics Publishing. All rights reserved.; International Conference on Scanning Probe Microscopy, SPM 2018 ; Conference date: 26-08-2018 Through 29-08-2018",

year = "2018",

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day = "14",

doi = "10.1088/1757-899X/443/1/012031",

language = "English",

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journal = "IOP Conference Series: Materials Science and Engineering",

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TY - JOUR

T1 - Influence of the domain structure on piezoelectric and dielectric properties of relaxor SBN single crystals

AU - Shikhova, V. A.

AU - Ushakov, A. D.

AU - Fedorovyh, V. V.

AU - Anikin, V. A.

AU - Esin, A. A.

AU - Shur, V. Ya

AU - Kholkin, A. L.

AU - Ivleva, L. I.

PY - 2018/11/14

Y1 - 2018/11/14

N2 - We have studied the influence of initial domain structure on piezoelectric and dielectric properties of Sr0.61Ba0.39Nb2O6 single crystals slightly doped with Ce and Ni. Initial domain structure was created by zero-field cooling, in-field cooling, and partial switching. The difference in the frequency dependences of macroscopic piezoelectric response and temperature dependences of dielectric permittivity for various initial domain structures was revealed.

AB - We have studied the influence of initial domain structure on piezoelectric and dielectric properties of Sr0.61Ba0.39Nb2O6 single crystals slightly doped with Ce and Ni. Initial domain structure was created by zero-field cooling, in-field cooling, and partial switching. The difference in the frequency dependences of macroscopic piezoelectric response and temperature dependences of dielectric permittivity for various initial domain structures was revealed.

UR - https://www.scopus.com/pages/publications/85057496437

U2 - 10.1088/1757-899X/443/1/012031

DO - 10.1088/1757-899X/443/1/012031

M3 - Conference article

AN - SCOPUS:85057496437

SN - 1757-8981

VL - 443

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012031

T2 - International Conference on Scanning Probe Microscopy, SPM 2018

Y2 - 26 August 2018 through 29 August 2018

ER -

Influence of the domain structure on piezoelectric and dielectric properties of relaxor SBN single crystals

Abstract

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