Skip to main navigation Skip to search Skip to main content

Interstitial OH radicals in F2-laser-irradiated bulk amorphous SiO2

  • Koichi Kajihara*
  • , Masahiro Hirano
  • , Linards Skuja
  • , Hideo Hosono
  • *Corresponding author for this work
  • Japan Science and Technology Agency
  • Institute of Science Tokyo

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

An interstitial hydroxyl radical (HȮ) has been generated in bulk amorphous SiO2 (a-SiO2) loaded with interstitial H2O molecules and exposed to F2 laser light (hv = 7.9 eV, λ = 157 nm) at 77 K. F2 laser light dissociates an O-H bond of interstitial H2O into a pair of hydrogen atom (Ḣ) and HO0. The resultant H0 disappears below 150 K, whereas HȮ is detectable after thermal annealing at 200 K. The electron paramagnetic resonance (EPR) signal of the interstitial HȮ recorded at 77 K is similar to that formed in amorphous ice, indicating that HȮ is confined in an orthorhombic field by hydrogen bonding, probably with adjacent H2O molecules, silanol (SiOH) groups, and bridging oxygen atoms in the a-SiO2 network.

Original languageEnglish
Pages (from-to)10224-10227
Number of pages4
JournalJournal of Physical Chemistry B
Volume110
Issue number21
DOIs
Publication statusPublished - 1 Jun 2006

Fingerprint

Dive into the research topics of 'Interstitial OH radicals in F2-laser-irradiated bulk amorphous SiO2'. Together they form a unique fingerprint.

Cite this