Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group

Ihor Bohdanov; Yana Suchikova; Sergii Kovachov; Valentina Peregudova; Alma K. Dauletbekova; Anatolijs Popovs

doi:10.1109/ELIT53502.2021.9501107

Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group

Ihor Bohdanov
, Yana Suchikova
, Sergii Kovachov
, Valentina Peregudova
, Alma K. Dauletbekova
, Anatolijs Popovs

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

1 Citation (Scopus)

Abstract

In this work, critical values of pore-formation in electrochemical machining of semiconductors of А3В5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.

Original language	English
Title of host publication	2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021 - Proceedings
Pages	190-193
DOIs	https://doi.org/10.1109/ELIT53502.2021.9501107
Publication status	Published - 2021

Keywords

Current density
Electrochemical etching
Semiconductors
Voltage of pore-formation

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10.1109/ELIT53502.2021.9501107

Cite this

Bohdanov, I., Suchikova, Y., Kovachov, S., Peregudova, V., Dauletbekova, A. K., & Popovs, A. (2021). Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group. In 2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021 - Proceedings (pp. 190-193) https://doi.org/10.1109/ELIT53502.2021.9501107

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title = "Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group",

abstract = "In this work, critical values of pore-formation in electrochemical machining of semiconductors of А3В5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.",

keywords = "Current density, Electrochemical etching, Semiconductors, Voltage of pore-formation",

author = "Ihor Bohdanov and Yana Suchikova and Sergii Kovachov and Valentina Peregudova and Dauletbekova, \{Alma K.\} and Anatolijs Popovs",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

doi = "10.1109/ELIT53502.2021.9501107",

language = "English",

isbn = "9781665442961",

pages = "190--193",

booktitle = "2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021 - Proceedings",

}

Bohdanov, I, Suchikova, Y, Kovachov, S, Peregudova, V, Dauletbekova, AK & Popovs, A 2021, Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group. in 2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021 - Proceedings. pp. 190-193. https://doi.org/10.1109/ELIT53502.2021.9501107

Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group. / Bohdanov, Ihor; Suchikova, Yana; Kovachov, Sergii et al.
2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021 - Proceedings. 2021. p. 190-193.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research › peer-review

TY - GEN

T1 - Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group

AU - Bohdanov, Ihor

AU - Suchikova, Yana

AU - Kovachov, Sergii

AU - Peregudova, Valentina

AU - Dauletbekova, Alma K.

AU - Popovs, Anatolijs

PY - 2021

Y1 - 2021

N2 - In this work, critical values of pore-formation in electrochemical machining of semiconductors of А3В5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.

AB - In this work, critical values of pore-formation in electrochemical machining of semiconductors of А3В5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.

KW - Current density

KW - Electrochemical etching

KW - Semiconductors

KW - Voltage of pore-formation

UR - https://www.researchgate.net/publication/353781613_Investigation_of_Critical_Points_of_Pore_Formation_Voltage_on_the_Surface_of_Semiconductors_of_A3B5_Group

UR - https://www.scopus.com/pages/publications/85124704797

U2 - 10.1109/ELIT53502.2021.9501107

DO - 10.1109/ELIT53502.2021.9501107

M3 - Conference paper

SN - 9781665442961

SP - 190

EP - 193

BT - 2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021 - Proceedings

ER -

Investigation of critical points of pore formation voltage on the surface of semiconductors of А3В5 group

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Keywords

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