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Investigation of Photoluminescence and Raman Emission of Porous Gallium Phosphide

  • Yana Suchikova
  • , Sergii Kovachov
  • , Zhakyp Karipbaev
  • , Yaroslav Zhydachevskyy
  • , Ihor Bohdanov
  • , Anatolijs Popovs

Research output: Chapter in Book/Report/Conference proceedingConference paperResearchpeer-review

Abstract

This article presents a study of porous gallium phosphode (GaP) utilizing photoluminescence (PL) and Raman spectroscopy, followed by its synthesis by electrochemical etching. The investigation identifies a blue shift in the PL peak, indicative of quantum confinement phenomena, and spectral confirmation of structural integrity through Raman analysis. Deconvolution of the PL emission into Gaussian components further demarcates a complex defect structure. These results contribute significantly to the discussion on the impact of nanostructuring on semiconductor properties, providing a pathway to the refined application of GaP in optoelectronic device engineering.

Original languageEnglish
Title of host publication2024 IEEE 42nd International Conference on Electronics and Nanotechnology, ELNANO 2024 - Proceedings
Pages227-230
Number of pages4
ISBN (Electronic)9798350368178
DOIs
Publication statusPublished - 2024

Publication series

NameProceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO
ISSN (Print)2377-6935
ISSN (Electronic)2693-3535

Keywords

  • Electrochemical Etching
  • Gallium Phosphide
  • Photoluminescence
  • Raman

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